Shenzhen Hongxinwei Technology Co., Ltd
| Payment Terms | T/T, Western Union |
| Supply Ability | 20000PCS/WEEK |
| Delivery Time | 2-3DAYS |
| Packaging Details | 2000PCS/REEL |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 35 A |
| Rds On - Drain-Source Resistance | 28.5 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 59 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 91 W |
| Channel Mode | Enhancement |
| Configuration | Single |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Transistor Type | 1 N-Channel |
| Width | 6.22 mm |
| Forward Transconductance - Min | 28 S |
| Fall Time | 34 ns |
| Rise Time | 42 ns |
| Factory Pack Quantity | 2000 |
| Brand Name | Infineon |
| Model Number | IRFR540ZTRPBF |
| Certification | ROHS |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T, Western Union | Supply Ability | 20000PCS/WEEK |
| Delivery Time | 2-3DAYS | Packaging Details | 2000PCS/REEL |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 35 A |
| Rds On - Drain-Source Resistance | 28.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 59 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 91 W | Channel Mode | Enhancement |
| Configuration | Single | Height | 2.3 mm |
| Length | 6.5 mm | Transistor Type | 1 N-Channel |
| Width | 6.22 mm | Forward Transconductance - Min | 28 S |
| Fall Time | 34 ns | Rise Time | 42 ns |
| Factory Pack Quantity | 2000 | Brand Name | Infineon |
| Model Number | IRFR540ZTRPBF | Certification | ROHS |
| Place of Origin | CHINA | ||
| High Light | 35A N Channel MOSFT ，39nC Qg N Channel MOSFT ，IRFR540ZTRPBF 1 Channel MOSFT | ||
IRFR540ZTRPBF
1.Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
2.Description
This HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175°C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofapplications.SDG
3.
4Why choose us?
100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
1998
Total Annual:
50000000-70000000
Employee Number:
100~200
Ecer Certification：
Site Member
Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t... Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t...
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