Shenzhen Hongxinwei Technology Co., Ltd
| Payment Terms | T/T, Western Union |
| Supply Ability | 20000PCS/WEEK |
| Delivery Time | 2-3DAYS |
| Packaging Details | 4000PCS/REEL |
| Product Category | MOSFET |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance | 70 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 20 nC |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 3 W |
| Channel Mode | Enhancement |
| Fall Time | 7 ns |
| Forward Transconductance - Min | 7 S |
| Rise Time | 7.5 ns |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 5 ns |
| Height | 1.8 mm |
| Length | 6.5 mm |
| Width | 3.5 mm |
| Factory packing quantity | 4000 |
| Brand Name | ON |
| Model Number | NDT3055L |
| Certification | ROHS |
| Place of Origin | CHIAN |
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Product Specification
| Payment Terms | T/T, Western Union | Supply Ability | 20000PCS/WEEK |
| Delivery Time | 2-3DAYS | Packaging Details | 4000PCS/REEL |
| Product Category | MOSFET | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 4 A | Rds On - Drain-Source Resistance | 70 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 20 nC | Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 3 W |
| Channel Mode | Enhancement | Fall Time | 7 ns |
| Forward Transconductance - Min | 7 S | Rise Time | 7.5 ns |
| Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 5 ns |
| Height | 1.8 mm | Length | 6.5 mm |
| Width | 3.5 mm | Factory packing quantity | 4000 |
| Brand Name | ON | Model Number | NDT3055L |
| Certification | ROHS | Place of Origin | CHIAN |
NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect
1.General Description
This Logic Level N−Channel enhancement mode power field effecttransistor is produced using onsemi’s proprietary, high cell density,DMOS technology. This very high density process is especiallytailored to minimize on−state resistance and provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation modes. This device is particularly suitedfor low voltage applications such as DC motor control and DC/DCconversion where fast switching, low in−line power loss, andresistance to transients are needed
2.Features
•4 A, 60 V♦RDS(ON) = 0.100 W @ VGS = 10 V
♦RDS(ON) = 0.120 W @ VGS = 4.5 V
•Low Drive Requirements Allowing Operation Directly from LogicDrivers. VGS(TH) < 2V.
•High Density Cell Design for Extremely Low RDS(ON).
•High Power and Current Handling Capability in a Widely UsedSurface Mount Package.
•This is a Pb−Free Device
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
1998
Total Annual:
50000000-70000000
Employee Number:
100~200
Ecer Certification：
Site Member
Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t... Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t...
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