Payment Terms | T/T, Western Union |
Supply Ability | 48000 |
Delivery Time | 2-3DAYS |
Packaging Details | 240PCS/BOX |
Product Category | MOSFET |
Technology | Si |
Mounting Style | Through Hole |
Package / Case | TO-247-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 47 A |
Rds On - Drain-Source Resistance | 70 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.1 V |
Qg - Gate Charge | 252 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 415 W |
Configuration | Single |
Fall Time | 8 ns |
Height | 21.1 mm |
Length | 16.13 mm |
Product Type | MOSFET |
Rise Time | 27 ns |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 111 ns |
Typical Turn-On Delay Time | 18 ns |
Width | 5.21 mm |
Factory Pack Quantity | 240 |
Brand Name | INFINEON |
Model Number | SPW47N60C3 |
Certification | ROHS |
Place of Origin | CHIAN |
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Product Specification
Payment Terms | T/T, Western Union | Supply Ability | 48000 |
Delivery Time | 2-3DAYS | Packaging Details | 240PCS/BOX |
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 47 A |
Rds On - Drain-Source Resistance | 70 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.1 V | Qg - Gate Charge | 252 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 415 W | Configuration | Single |
Fall Time | 8 ns | Height | 21.1 mm |
Length | 16.13 mm | Product Type | MOSFET |
Rise Time | 27 ns | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 111 ns | Typical Turn-On Delay Time | 18 ns |
Width | 5.21 mm | Factory Pack Quantity | 240 |
Brand Name | INFINEON | Model Number | SPW47N60C3 |
Certification | ROHS | Place of Origin | CHIAN |
SPW47N60C3 MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3
1.Feature
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
2.Definition of diodes switching characteristics
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
1998
Total Annual:
50000000-70000000
Employee Number:
100~200
Ecer Certification:
Site Member
Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t... Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t...
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