HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability | 10000 pieces per month |
| Delivery Time | 3 working days |
| Packaging Details | Strong wooden box for Global shipping |
| Application | microelectronics , optoelectronics and RF Microwave |
| Diameter | Ø 3" / Ø 4" GaAs wafer |
| Thickness | 500 um ~ 625 um |
| Grade | Epi polished grade / mechanical grade |
| Brand Name | ZG |
| Model Number | MS |
| Certification | CE |
| Place of Origin | CHINA |
View Detail Information
Explore similar products
Aluminum Nitride Ceramics, with Very High Thermal Conductivity
99% SIC SILICON CARBIDE MICRO REACTION PLATE 200MM 300MM LENGTH
HMI PLC Lifting Sintering Furnace
TECHNICAL CERAMICS FOR WIRE PRODUCTION AND CABLE INDUSTRY
Product Specification
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram | Supply Ability | 10000 pieces per month |
| Delivery Time | 3 working days | Packaging Details | Strong wooden box for Global shipping |
| Application | microelectronics , optoelectronics and RF Microwave | Diameter | Ø 3" / Ø 4" GaAs wafer |
| Thickness | 500 um ~ 625 um | Grade | Epi polished grade / mechanical grade |
| Brand Name | ZG | Model Number | MS |
| Certification | CE | Place of Origin | CHINA |
| High Light | GaAs Based Epi Wafer ，625Um Epi Wafer ，Polished Grade epiwafer | ||
GaAs Based Epi Wafer
We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your GaAs epi layer structure . Please contact us for more product information or discuss your epi layer structure .
Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs .
| Material Capability | Substrate | Wafer Size |
|---|---|---|
| GaAs/GaAs | GaAs wafer | Up to 4 inch |
| LT-GaAs/GaAs | GaAs wafer | Up to 4 inch |
| AlAs/GaAs | GaAs wafer | Up to 4 inch |
| InAs/GaAs | GaAs wafer | Up to 4 inch |
| AlGaAs/GaAs | GaAs wafer | Up to 4 inch |
| InGaAs/GaAs | GaAs wafer | Up to 4 inch |
| InGaP/GaAs | GaAs wafer | Up to 4 inch |
| GaAsP/GaAs | GaAs wafer | Up to 4 inch |
Optoelectronic applications:
Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides.
Electronic applications:
FETs, HBTs, HEMTs, diodes, Microwave devices.
Epi Layer Structure ( HEMT / HBT )
| Growth | MOCVD |
|---|---|
| Dopant source | P type / Be , N type / Si |
| Cap layer | i-GaAs layer |
| Active layer | n-AlGaAs layer |
| Space layer | i-AlGaAs layer |
| Buffer layer | i-GaAs layer |
| Substrate | Ø 3" / Ø 4" GaAs wafer |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Importer,Exporter
Year Established:
2007
Total Annual:
5000000-8000000
Employee Number:
50~100
Ecer Certification：
Verified Supplier
Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic... Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic...
Get in touch with us
Leave a Message, we will call you back quickly!