HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability | 10000 pieces per month |
| Delivery Time | 3 working days |
| Packaging Details | Strong wooden box for Global shipping |
| Application | microelectronics , optoelectronics and RF Microwave |
| Diameter | Ø 3" / Ø 4" GaAs wafer |
| Thickness | 500 um ~ 625 um |
| Grade | Epi polished grade / mechanical grade |
| Brand Name | ZG |
| Model Number | MS |
| Certification | CE |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram | Supply Ability | 10000 pieces per month |
| Delivery Time | 3 working days | Packaging Details | Strong wooden box for Global shipping |
| Application | microelectronics , optoelectronics and RF Microwave | Diameter | Ø 3" / Ø 4" GaAs wafer |
| Thickness | 500 um ~ 625 um | Grade | Epi polished grade / mechanical grade |
| Brand Name | ZG | Model Number | MS |
| Certification | CE | Place of Origin | CHINA |
| High Light | 4 Inch Technical Ceramic Parts ，InP Based Epi Wafer ，3 Inch Epi Wafer | ||
InP Based Epi Wafer
We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your InP epi layer structure . Please contact us for more product information or discuss your epi layer structure .
Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs.
| Material Capability | Substrate | Wafer Size |
|---|---|---|
| InP/InP | InP wafer | Up to 4 inch |
| InAlAs/InP | InP waferr | Up to 4 inch |
| InGaAs/InP | InP wafer | Up to 4 inch |
| InGaAsP/InP | InP wafer | Up to 4 inch |
| InGaAs/InGaAsP/InP | InP wafer | Up to 4 inch |
| InP/InAlAs/InP | InP wafer | Up to 4 inch |
Optoelectronic applications:
Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides
Electronic applications:
FETs, HBTs, HEMTs, diodes, Microwave devices.
Epi Layer Structure ( HEMT / HBT )
| Growth | MOCVD |
|---|---|
| Dopant source | P type / Be , N type / Si |
| Cap layer | i-InP layer |
| Active layer | n-InGaAs layer |
| Space layer | i-InGaAsP layer |
| Buffer layer | i-InP layer |
| Substrate | Ø 2" / Ø 3" / Ø 4" InP wafer |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Importer,Exporter
Year Established:
2007
Total Annual:
5000000-8000000
Employee Number:
50~100
Ecer Certification：
Verified Supplier
Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic... Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic...
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