S29GL01GS11FHIV23 IC FLASH 1GBIT PARALLEL 64FBGA Infineon Technologies

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Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	1Gbit
Memory Organization	64M x 16
Memory Interface	Parallel
Clock Frequency	-
Write Cycle Time - Word, Page	60ns
Access Time	110 ns
Voltage - Supply	1.65V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	64-LBGA
Supplier Device Package	64-FBGA (13x11)
Brand Name	Infineon Technologies
Model Number	S29GL01GS11FHIV23

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Product Details
Company Details

Product Specification


Payment Terms	T/T	Supply Ability	In stock
Delivery Time	3-5 work days	Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NOR	Memory Size	1Gbit
Memory Organization	64M x 16	Memory Interface	Parallel
Clock Frequency	-	Write Cycle Time - Word, Page	60ns
Access Time	110 ns	Voltage - Supply	1.65V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Package / Case	64-LBGA	Supplier Device Package	64-FBGA (13x11)
Brand Name	Infineon Technologies	Model Number	S29GL01GS11FHIV23

Product Details

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family

S29GL01GS 1 Gbit (128 Mbyte)
S29GL512S 512 Mbit (64 Mbyte)
S29GL256S 256 Mbit (32 Mbyte)
S29GL128S 128 Mbit (16 Mbyte)
CMOS 3.0 Volt Core with Versatile I/O

General Description

The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time asfast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting infaster effective
programming time than standard programming algorithms. Thismakes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

65 nm MirrorBit Eclipse Technology
Single supply (VCC) for read / program / erase (2.7V to 3.6V)
Versatile I/O Feature
– Wide I/O voltage range (VIO): 1.65V to VCC
x16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of 512 bytes
Single word and multiple program on same word options
Sector Erase
– Uniform 128-kbyte sectors
Suspend and Resume commands for Program and Erase operations
Status Register, Data Polling, and Ready/Busy pin methods to determine device status
Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each sector
Separate 1024-byte One Time Program (OTP) array with two lockable regions
Common Flash Interface (CFI) parameter table
Temperature Range
– Industrial (-40°C to +85°C)
– In-Cabin (-40°C to +105°C)
100,000 erase cycles for any sector typical
20-year data retention typical
Packaging Options
– 56-pin TSOP
– 64-ball LAA Fortified BGA, 13 mm x 11 mm
– 64-ball LAE Fortified BGA, 9 mm x 9 mm
– 56-ball VBU Fortified BGA, 9 mm x 7 mm

Specifications

Attribute	Attribute Value
Manufacturer	Cypress Semiconductor
Product Category	Memory ICs
Series	GL-S
Packaging	Tape & Reel (TR) Alternate Packaging
Package-Case	64-LBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	1.65 V ~ 3.6 V
Supplier-Device-Package	64-Fortified BGA (13x11)
Memory Capacity	1G (64M x 16)
Memory-Type	FLASH - NOR
Speed	110ns
Format-Memory	FLASH

Functional compatible componentForm,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
S29GL01GS11DHIV20 Memory	Flash, 128MX8, 110ns, PBGA64, FBGA-64	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS11DHIV20
S29GL01GS11DHIV10 Memory	Flash, 128MX8, 110ns, PBGA64, PACKAGE	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS11DHIV10
S29GL01GS10DHI020 Memory	Flash, 128MX8, 100ns, PBGA64, PACKAGE	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS10DHI020
S29GL01GS11DHI020 Memory	Flash, 128MX8, 110ns, PBGA64, FBGA-64	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS11DHI020
S29GL01GS10DHI010 Memory	Flash, 128MX8, 100ns, PBGA64, PACKAGE	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS10DHI010
S29GL01GS11DHI010 Memory	Flash, 128MX8, 110ns, PBGA64, FBGA-64	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS11DHI010
S29GL01GS12DHIV10 Memory	Flash, 128MX8, 120ns, PBGA64, 9 X 9 MM, HALOGEN FREE AND LEAD FREE, FBGA-64	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS12DHIV10
S29GL01GS10FHI010 Memory	Flash, 64MX16, 100ns, PBGA64, FBGA-64	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS10FHI010
S29GL01GS11FHIV10 Memory	Flash, 64MX16, 110ns, PBGA64, FBGA-64	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS11FHIV10
S29GL01GS11FHI010 Memory	Flash, 128MX8, 110ns, PBGA64,	Cypress Semiconductor	S29GL01GS11FHIV23 vs S29GL01GS11FHI010

Descriptions

FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 110ns 64-Fortified BGA (13x11)

NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin Fortified BGA T/R

Flash Memory 1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, LOWEST ADDRESS SECTOR PROTECTED

Company Details

Bronze Gleitlager

Bronze Sleeve Bushings

and

Graphite Plugged Bushings

from Quality China Factory

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Business Type:

Distributor/Wholesaler,Trading Company 
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Year Established:

2005 


Total Annual:

1000000-3000000
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Employee Number:

100~150 


Ecer Certification：

Verified Supplier 

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Sanhuang electronics (Hong Kong) Co., Limited
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
https://www.integratedcircuit-ic.com/

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