CY7C1313KV18-250BZXI IC SRAM 18MBIT PAR 165FBGA Infineon Technologies

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Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Synchronous, QDR II
Memory Size	18Mbit
Memory Organization	1M x 18
Memory Interface	Parallel
Clock Frequency	250 MHz
Write Cycle Time - Word, Page	-
Access Time	-
Voltage - Supply	1.7V ~ 1.9V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	165-LBGA
Supplier Device Package	165-FBGA (13x15)
Brand Name	Infineon Technologies
Model Number	CY7C1313KV18-250BZXI

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Product Specification


Payment Terms	T/T	Supply Ability	In stock
Delivery Time	3-5 work days	Packaging Details	anti-static bag & cardboard box
Memory Type	Volatile	Memory Format	SRAM
Technology	SRAM - Synchronous, QDR II	Memory Size	18Mbit
Memory Organization	1M x 18	Memory Interface	Parallel
Clock Frequency	250 MHz	Write Cycle Time - Word, Page	-
Access Time	-	Voltage - Supply	1.7V ~ 1.9V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Package / Case	165-LBGA	Supplier Device Package	165-FBGA (13x15)
Brand Name	Infineon Technologies	Model Number	CY7C1313KV18-250BZXI

Product Details

Functional Description

The CY7C1311KV18, CY7C1911KV18, CY7C1313KV18, and CY7C1315KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II architecture. QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to completely eliminate the need to ‘turnaround’ the data bus that exists with common I/O devices.

Features

■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 333-MHz clock for high bandwidth
■ Four-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 666 MHz) at 333 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two Input Clocks for Output Data (C and C) to minimize Clock skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high speed systems
■ Single multiplexed address input bus latches address inputs for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR® II operates with 1.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW
■ Available in ×8, ×9, ×18, and ×36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD
❐ Supports both 1.5 V and 1.8 V I/O supply
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Variable drive HSTL output buffers
■ JTAG 1149.1 compatible test access port
■ PLL for accurate data placement

Specifications

Attribute	Attribute Value
Manufacturer	Cypress Semiconductor
Product Category	Memory ICs
Series	CY7C1313KV18
Type	Synchronous
Packaging	Tray
Mounting-Style	SMD/SMT
Package-Case	165-LBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	1.7 V ~ 1.9 V
Supplier-Device-Package	165-FBGA (13x15)
Memory Capacity	18M (1M x 18)
Memory-Type	SRAM - Synchronous, QDR II
Speed	250MHz
Access-Time	0.45 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 85 C
Operating temperature range	- 40 C
Interface-Type	Parallel
Organization	1 M x 18
Supply-Current-Max	440 mA
Supply-Voltage-Max	1.9 V
Supply-Voltage-Min	1.7 V
Package-Case	FBGA-165
Maximum-Clock-Frequency	250 MHz

Functional compatible componentForm,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
CY7C1313KV18-250BZC Memory	QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	Cypress Semiconductor	CY7C1313KV18-250BZXI vs CY7C1313KV18-250BZC
CY7C1313KV18-250BZXC Memory	QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, FBGA-165	Cypress Semiconductor	CY7C1313KV18-250BZXI vs CY7C1313KV18-250BZXC
CY7C1313KV18-250BZI Memory	QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	Cypress Semiconductor	CY7C1313KV18-250BZXI vs CY7C1313KV18-250BZI

Descriptions

SRAM - Synchronous, QDR II Memory IC 18Mb (1M x 18) Parallel 250MHz 165-FBGA (13x15)

SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin FBGA Tray

SRAM 18Mb 250Mhz 1.8V 1M x 18 QDR II SRAM

Company Details

Bronze Gleitlager

Bronze Sleeve Bushings

and

Graphite Plugged Bushings

from Quality China Factory

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Business Type:

Distributor/Wholesaler,Trading Company 
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Year Established:

2005 
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Total Annual:

1000000-3000000
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Employee Number:

100~150 
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Verified Supplier 

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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https://www.integratedcircuit-ic.com/

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