S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp

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Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	64Mbit
Memory Organization	4M x 16
Memory Interface	Parallel
Clock Frequency	108 MHz
Write Cycle Time - Word, Page	60ns
Access Time	80 ns
Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-25°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	84-VFBGA
Supplier Device Package	84-FBGA (11.6x8)
Brand Name	Cypress Semiconductor Corp
Model Number	S29WS064RABBHW010

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Product Details
Company Details

Product Specification


Payment Terms	T/T	Supply Ability	In stock
Delivery Time	3-5 work days	Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NOR	Memory Size	64Mbit
Memory Organization	4M x 16	Memory Interface	Parallel
Clock Frequency	108 MHz	Write Cycle Time - Word, Page	60ns
Access Time	80 ns	Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-25°C ~ 85°C (TA)	Mounting Type	Surface Mount
Package / Case	84-VFBGA	Supplier Device Package	84-FBGA (11.6x8)
Brand Name	Cypress Semiconductor Corp	Model Number	S29WS064RABBHW010

Product Details

General Description

The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.

Distinctive Characteristics

■ Single 1.8 V read/program/erase (1.70–1.95 V)
■ 110 nm MirrorBit™ Technology
■ Simultaneous Read/Write operation with zero
latency
■ 32-word Write Buffer
■ Sixteen-bank architecture consisting of 16/8/4
Mwords for WS256N/128N/064N, respectively
■ Four 16 Kword sectors at both top and bottom of
memory array
■ 254/126/62 64 Kword sectors (WS256N/128N/
064N)
■ Programmable burst read modes
— Linear for 32, 16 or 8 words linear read with or
without wrap-around
— Continuous sequential read mode
■ SecSi™ (Secured Silicon) Sector region consisting
of 128 words each for factory and customer
■ 20-year data retention (typical)
■ Cycling Endurance: 100,000 cycles per sector
(typical)
■ RDY output indicates data available to system
■ Command set compatible with JEDEC (42.4)
standard
■ Hardware (WP#) protection of top and bottom
sectors
■ Dual boot sector configuration (top and bottom)
■ Offered Packages
— WS064N: 80-ball FBGA (7 mm x 9 mm)
— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)
■ Low VCC write inhibit
■ Persistent and Password methods of Advanced
Sector Protection
■ Write operation status bits indicate program and
erase operation completion
■ Suspend and Resume commands for Program and
Erase operations
■ Unlock Bypass program command to reduce
programming time
■ Synchronous or Asynchronous program operation,
independent of burst control register settings
■ ACC input pin to reduce factory programming time
■ Support for Common Flash Interface (CFI)
■ Industrial Temperature range (contact factory)

Specifications

Attribute	Attribute Value
Manufacturer	Cypress Semiconductor
Product Category	Memory ICs
Series	WS-R
Packaging	Tray
Mounting-Style	SMD/SMT
Operating-Temperature-Range	- 25 C to + 85 C
Package-Case	*
Operating-Temperature	-25°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	1.7 V ~ 1.95 V
Supplier-Device-Package	*
Memory Capacity	64M (4M x 16)
Memory-Type	FLASH - NOR
Speed	108MHz
Architecture	Sector
Format-Memory	FLASH
Standard	Common Flash Interface (CFI)
Interface-Type	Parallel
Organization	4 M x 16
Supply-Current-Max	44 mA
Data-Bus-Width	16 bit
Supply-Voltage-Max	1.95 V
Supply-Voltage-Min	1.7 V
Package-Case	FBGA-84
Maximum-Clock-Frequency	108 MHz
Timing-Type	Asynchronous Synchronous

Functional compatible componentForm,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
S29WS064R0SBHW000 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064R0SBHW000
S29WS064R0SBHW013 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064R0SBHW013
S29WS064RABBHW010 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064RABBHW010
S29WS064R0SBHW010 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064R0SBHW010
S29WS064R0PBHW010 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064R0PBHW010
S29WS064R0SBHW003 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064R0SBHW003
S29WS064RABBHW013 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064RABBHW013
S29WS064R0PBHW013 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064R0PBHW013
S29WS064RABBHW003 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064RABBHW003
S29WS064R0PBHW000 Memory	Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84	Cypress Semiconductor	S29WS064RABBHW010 vs S29WS064R0PBHW000

Descriptions

FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 108MHz 80ns 84-FBGA (11.6x8)

NOR Flash Parallel 1.8V 64M-bit 4M x 16 80ns 84-Pin TFBGA Tray

Flash Memory

Company Details

Bronze Gleitlager

Bronze Sleeve Bushings

and

Graphite Plugged Bushings

from Quality China Factory

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Business Type:

Distributor/Wholesaler,Trading Company 
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Year Established:

2005 
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Total Annual:

1000000-3000000


Employee Number:

100~150 


Ecer Certification：

Verified Supplier 

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Sanhuang electronics (Hong Kong) Co., Limited
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
https://www.integratedcircuit-ic.com/

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