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China PC28F640P30B85A IC FLASH 64MBIT PAR 64EASYBGA Micron Technology Inc.
China PC28F640P30B85A IC FLASH 64MBIT PAR 64EASYBGA Micron Technology Inc.

  1. China PC28F640P30B85A IC FLASH 64MBIT PAR 64EASYBGA Micron Technology Inc.

PC28F640P30B85A IC FLASH 64MBIT PAR 64EASYBGA Micron Technology Inc.

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Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 64Mbit
Memory Organization 4M x 16
Memory Interface Parallel
Clock Frequency 52 MHz
Write Cycle Time - Word, Page 85ns
Access Time 85 ns
Voltage - Supply 1.7V ~ 2V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 64-TBGA
Supplier Device Package 64-EasyBGA (10x13)
Brand Name Micron Technology Inc.
Model Number PC28F640P30B85A

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  1. Product Details
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Product Specification

Payment Terms T/T Supply Ability In stock
Delivery Time 3-5 work days Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NOR Memory Size 64Mbit
Memory Organization 4M x 16 Memory Interface Parallel
Clock Frequency 52 MHz Write Cycle Time - Word, Page 85ns
Access Time 85 ns Voltage - Supply 1.7V ~ 2V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 64-TBGA Supplier Device Package 64-EasyBGA (10x13)
Brand Name Micron Technology Inc. Model Number PC28F640P30B85A

Product Details

 

Introduction

This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications.

 

 

Product Features

■ High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
— 1.8 V buffered programming at 7 µs/byte (Typ)
■ Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom configuration
— 128-KByte main blocks
■ Voltage and Power
—VCC(core) voltage: 1.7 V – 2.0 V
—VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
■ Quality and Reliability
— Operating temperature: –40 °C to +85 °C
• 1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (130 nm)
■ Security
— One-Time Programmable Registers:
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
• 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
— Absolute write protection: VPP= VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
■ Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
—Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
■ Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP package
— 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
— 16-bit wide data bus

 

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Series StrataFlash™
Packaging Tray
Package-Case 64-TBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 1.7 V ~ 2 V
Supplier-Device-Package 64-EasyBGA (10x13)
Memory Capacity 64M (4M x 16)
Memory-Type FLASH - NOR
Speed 85ns
Format-Memory FLASH

Descriptions

FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 52MHz 85ns 64-EasyBGA (10x13)

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2005

  • Total Annual:

    1000000-3000000

  • Employee Number:

    100~150

  • Ecer Certification:

    Verified Supplier

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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  • Sanhuang electronics (Hong Kong) Co., Limited
  • No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
  • https://www.integratedcircuit-ic.com/

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