AT45DB041E-MHN-T IC FLASH 4MBIT SPI 85MHZ 8UDFN Renesas Design Germany GmbH

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Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH
Memory Size	4Mbit
Memory Organization	264 Bytes x 2048 pages
Memory Interface	SPI
Clock Frequency	85 MHz
Write Cycle Time - Word, Page	8µs, 3ms
Access Time	-
Voltage - Supply	1.65V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TC)
Mounting Type	Surface Mount
Package / Case	8-UDFN Exposed Pad
Supplier Device Package	8-UDFN (5x6)
Brand Name	Renesas Design Germany GmbH
Model Number	AT45DB041E-MHN-T

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Product Details
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Product Specification


Payment Terms	T/T	Supply Ability	In stock
Delivery Time	3-5 work days	Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH	Memory Size	4Mbit
Memory Organization	264 Bytes x 2048 pages	Memory Interface	SPI
Clock Frequency	85 MHz	Write Cycle Time - Word, Page	8µs, 3ms
Access Time	-	Voltage - Supply	1.65V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TC)	Mounting Type	Surface Mount
Package / Case	8-UDFN Exposed Pad	Supplier Device Package	8-UDFN (5x6)
Brand Name	Renesas Design Germany GmbH	Model Number	AT45DB041E-MHN-T

Product Details

[adesto]

Description

The AT45DB041E is a 1.65V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB041E also supports the RapidS serial interface for applications requiring very high speed operation. Its 4,194,304 bits of memory are organized as 2,048 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB041E also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed.
Interleaving between both buffers can dramatically increase a systems ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.

Features

● Single 1.65V - 3.6V supply
● Serial Peripheral Interface (SPI) compatible
● Supports SPI modes 0 and 3
● Supports RapidS™ operation
● Continuous read capability through entire array
● Up to 85MHz
● Low-power read option up to 15 MHz
● Clock-to-output time (tV) of 6ns maximum
● User configurable page size
● 256 bytes per page
● 264 bytes per page (default)
● Page size can be factory pre-configured for 256 bytes
● Two fully independent SRAM data buffers (256/264 bytes)
● Allows receiving data while reprogramming the main memory array
● Flexible programming options
● Byte/Page Program (1 to 256/264 bytes) directly into main memory
● Buffer Write
● Buffer to Main Memory Page Program
● Flexible erase options
● Page Erase (256/264 bytes)
● Block Erase (2KB)
● Sector Erase (64KB)
● Chip Erase (4-Mbits)
● Program and Erase Suspend/Resume
● Advanced hardware and software data protection features
● Individual sector protection
● Individual sector lockdown to make any sector permanently read-only
● 128-byte, One-Time Programmable (OTP) Security Register
● 64 bytes factory programmed with a unique identifier
● 64 bytes user programmable
● Hardware and software controlled reset options
● JEDEC Standard Manufacturer and Device ID Read
● Low-power dissipation
● 400nA Ultra-Deep Power-Down current (typical)
● 3µA Deep Power-Down current (typical)
● 25µA Standby current (typical)
● 7mA Active Read current (typical @ 15 MHz))
● Endurance: 100,000 program/erase cycles per page minimum
● Data retention: 20 years
● Complies with full industrial temperature range
● Green (Pb/Halide-free/RoHS compliant) packaging options
● 8-lead SOIC (0.150" wide and 0.208" wide)
● 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
● 8-ball Wafer Level Chip Scale Package
● Die in Wafer Form(1)

Specifications

Attribute	Attribute Value
Manufacturer	Adesto Technologies
Product Category	Memory ICs
Series	-
Packaging	Alternate Packaging
Package-Case	8-UDFN Exposed Pad
Operating-Temperature	-40°C ~ 85°C (TC)
Interface	SPI, RapidS
Voltage-Supply	1.65 V ~ 3.6 V
Supplier-Device-Package	8-UDFN (5x6)
Memory Capacity	4M (2048 pages x 264 bytes)
Memory-Type	DataFLASH
Speed	85MHz
Format-Memory	FLASH

Descriptions

FLASH Memory IC 4Mb (264 Bytes x 2048 pages) SPI 85MHz 8-UDFN (5x6)

NOR Flash Serial-SPI 1.8V 4M-bit 512K x 8 7ns 8-Pin UDFN EP T/R

Flash Memory 4M, 85MHz 1.65-3.6V DataFlash

Company Details

Bronze Gleitlager

Bronze Sleeve Bushings

and

Graphite Plugged Bushings

from Quality China Factory

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Business Type:

Distributor/Wholesaler,Trading Company 
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Year Established:

2005 
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Total Annual:

1000000-3000000
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Employee Number:

100~150 
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Ecer Certification：

Verified Supplier 

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Sanhuang electronics (Hong Kong) Co., Limited
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https://www.integratedcircuit-ic.com/

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