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Sanhuang electronics (Hong Kong) Co., Limited

  • China,Shenzhen
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China IS43DR16640C-25DBL IC DRAM 1GBIT PARALLEL 84TWBGA ISSI, Integrated Silicon
China IS43DR16640C-25DBL IC DRAM 1GBIT PARALLEL 84TWBGA ISSI, Integrated Silicon

  1. China IS43DR16640C-25DBL IC DRAM 1GBIT PARALLEL 84TWBGA ISSI, Integrated Silicon

IS43DR16640C-25DBL IC DRAM 1GBIT PARALLEL 84TWBGA ISSI, Integrated Silicon

  1. MOQ: 1
  2. Price: Based on current price
  3. Get Latest Price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Access Time 400 ps
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 84-TFBGA
Supplier Device Package 84-TWBGA (8x12.5)
Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS43DR16640C-25DBL

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability In stock
Delivery Time 3-5 work days Packaging Details anti-static bag & cardboard box
Memory Type Volatile Memory Format DRAM
Technology SDRAM - DDR2 Memory Size 1Gbit
Memory Organization 64M x 16 Memory Interface Parallel
Clock Frequency 400 MHz Write Cycle Time - Word, Page 15ns
Access Time 400 ps Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC) Mounting Type Surface Mount
Package / Case 84-TFBGA Supplier Device Package 84-TWBGA (8x12.5)
Brand Name ISSI, Integrated Silicon Solution Inc Model Number IS43DR16640C-25DBL

Product Details

 

FEATURES

• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
• High speed data transfer rates with system frequency up to 933 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8 only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling
• Up to 200 MHz in DLL off mode
• Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)

 

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Manufacturer ISSI
Product-Category DRAM
RoHS Details
Brand ISSI
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
MT47H64M16NF-25E:M
Memory
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc IS43DR16640C-25DBL vs MT47H64M16NF-25E:M
MT47H64M16NF-25EIT:M
Memory
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc IS43DR16640C-25DBL vs MT47H64M16NF-25EIT:M
IS43DR16640C-25DBLA2
Memory
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc IS43DR16640C-25DBL vs IS43DR16640C-25DBLA2
IS43DR16640C-25DBLA1
Memory
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc IS43DR16640C-25DBL vs IS43DR16640C-25DBLA1

Descriptions

SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ns 84-TWBGA (8x12.5)
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA
DRAM DDR2,1G,1.8V, RoHs 400MHz, 64Mx16

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2005

  • Total Annual:

    1000000-3000000

  • Employee Number:

    100~150

  • Ecer Certification:

    Verified Supplier

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Get in touch with us

  • Reach Us
  • Sanhuang electronics (Hong Kong) Co., Limited
  • No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
  • https://www.integratedcircuit-ic.com/

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