IS42S32800J-7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI, Integrated Silicon Solution

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Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM
Memory Size	256Mbit
Memory Organization	8M x 32
Memory Interface	Parallel
Clock Frequency	143 MHz
Write Cycle Time - Word, Page	-
Access Time	5.4 ns
Voltage - Supply	3V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	90-TFBGA
Supplier Device Package	90-TFBGA (8x13)
Brand Name	ISSI, Integrated Silicon Solution Inc
Model Number	IS42S32800J-7BLI

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Product Details
Company Details

Product Specification


Payment Terms	T/T	Supply Ability	In stock
Delivery Time	3-5 work days	Packaging Details	anti-static bag & cardboard box
Memory Type	Volatile	Memory Format	DRAM
Technology	SDRAM	Memory Size	256Mbit
Memory Organization	8M x 32	Memory Interface	Parallel
Clock Frequency	143 MHz	Write Cycle Time - Word, Page	-
Access Time	5.4 ns	Voltage - Supply	3V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Package / Case	90-TFBGA	Supplier Device Package	90-TFBGA (8x13)
Brand Name	ISSI, Integrated Silicon Solution Inc	Model Number	IS42S32800J-7BLI

Product Details

OVERVIEW

ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

GENERAL DESCRIPTION
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.

FEATURES

• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial temperature availability
• Package 400-mil 86-pin TSOP II

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	90-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	3 V ~ 3.6 V
Supplier-Device-Package	90-TFBGA (8x13)
Memory Capacity	256M (8M x 32)
Memory-Type	SDRAM
Speed	143MHz
Format-Memory	RAM

Descriptions

SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA

DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT

Company Details

Bronze Gleitlager

Bronze Sleeve Bushings

and

Graphite Plugged Bushings

from Quality China Factory

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Business Type:

Distributor/Wholesaler,Trading Company 
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Year Established:

2005 
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Total Annual:

1000000-3000000
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Employee Number:

100~150 
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Ecer Certification：

Verified Supplier 

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Sanhuang electronics (Hong Kong) Co., Limited
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
https://www.integratedcircuit-ic.com/

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