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Berton Electronics Limited

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China IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS
China IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS

  1. China IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS
  2. China IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS

IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS

  1. MOQ: 1pcs
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Payment Terms T/T
Brand Name INFINEON
Model Number IRF7342TRPBF

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  1. Product Details
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Product Specification

Payment Terms T/T Brand Name INFINEON
Model Number IRF7342TRPBF
High Light N-Channel MOSFET 40V 9.1ALow Rds(on) SOIC-8 MOSFETFast Switching Power Electronics MOSFET
IRF7342TRPBF N-Channel MOSFET
High-performance 40V, 9.1A N-channel MOSFET featuring low RDS(on), fast switching, and RoHS compliance in SOIC-8 SMT package. Ideal for power electronics applications requiring efficient switching and thermal performance.
Product Overview
The Infineon IRF7342TRPBF is an N-channel enhancement-mode MOSFET utilizing advanced trench gate technology. Designed for power management applications, it delivers low on-resistance, high switching speed, and excellent thermal performance. This industrial-grade component is suitable for demanding environments in power systems, motor drives, consumer electronics, and automotive applications.
Technical Specifications
Category Parameter Value Notes
Electrical Characteristics Drain-Source Voltage (VDS) 40V (Max) Suitable for 12V/24V/40V systems
Continuous Drain Current (ID) 9.1A (Max, T=25°C) Supports medium-current loads
On-Resistance (RDS(on)) Low RDS(on) Minimizes conduction loss
Gate-Source Voltage (VGS) ±12V (Max) Compatible with standard drive circuits
Avalanche Energy (EAS) Robust capability Withstands transient voltage spikes
Mechanical Characteristics Package Type SOIC-8 SMT Compact surface-mount design
Operating Temperature -55°C to +150°C Industrial-grade reliability
Thermal Resistance (RθJA) Excellent performance Reduces need for external heat sinks
Key Features
  • Low On-Resistance: Minimizes conduction power loss for improved system efficiency
  • Fast Switching: Advanced trench gate technology enables high-frequency operation
  • Robust Protection: Strong avalanche capability handles transient voltage spikes
  • Thermal Performance: Excellent heat dissipation characteristics
  • Wide Compatibility: Suitable for 12V-40V applications with ±12V gate tolerance
  • Reliable Construction: Industrial-grade reliability with extended temperature range
  • Compact Design: SOIC-8 package enables space-efficient PCB layouts
Typical Applications
Power Management Systems
Used in DC-DC converters and voltage regulators for efficient power conversion in industrial controllers and IoT devices.
Motor Drive Applications
Controls current in small DC motors and stepper motor controllers, with protection against inductive voltage spikes.
Consumer Electronics
Implements efficient switching in power adapters, chargers, and household appliances requiring high reliability.
Industrial Automation
Used in PLCs, sensor modules, and solenoid drives where rugged performance is required in harsh environments.
Automotive Electronics
Controls lighting systems and auxiliary power units in vehicles, withstanding battery voltage fluctuations and high temperatures.

Company Details

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Who We AreFounded in 2009, Berton Electronics Limited has grown into a globally recognized distributor of electronic components, trusted by enterprises, research institutions, and enthusiasts across 50+ countries.  As an authorized partner to 500+ industry-leading brands—including TI, STM... Who We AreFounded in 2009, Berton Electronics Limited has grown into a globally recognized distributor of electronic components, trusted by enterprises, research institutions, and enthusiasts across 50+ countries.  As an authorized partner to 500+ industry-leading brands—including TI, STM...

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  • Berton Electronics Limited
  • Room 905 Dong Le Building , NanJi Road , Luohu District, Shenzhen,China.
  • https://www.integratedcircuitsics.com/

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