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China CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT
China CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT

  1. China CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT

CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT

  1. MOQ: 10
  2. Price: 1500
  3. Get Latest Price
Payment Terms T/T
Supply Ability 500
Delivery Time 5-8days
Packaging Details 40/box
Product Type GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Package Height 0.75 mm
Package Type Surface Mount
Supply Voltage 3.3V
Package Material Ceramic
Frequency Range DC to 110 GHz
Input Return Loss 20dB
Output Return Loss 20 dB
Application RF and Microwave
Package Size 3 mm x 3 mm
Operating Temperature -40°C to +85°C
Power Output Up to 100 W
Gain Up to 40 dB
Noise Figure 0.5 dB
Factory Pack Quantity 20
Brand Name MACOM
Model Number CGHV96050F2
Place of Origin Philippines

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Product Specification

Payment Terms T/T Supply Ability 500
Delivery Time 5-8days Packaging Details 40/box
Product Type GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt Package Height 0.75 mm
Package Type Surface Mount Supply Voltage 3.3V
Package Material Ceramic Frequency Range DC to 110 GHz
Input Return Loss 20dB Output Return Loss 20 dB
Application RF and Microwave Package Size 3 mm x 3 mm
Operating Temperature -40°C to +85°C Power Output Up to 100 W
Gain Up to 40 dB Noise Figure 0.5 dB
Factory Pack Quantity 20 Brand Name MACOM
Model Number CGHV96050F2 Place of Origin Philippines
High Light CGHV96050F2 Transistor HEMT20dB Gallium Nitride GaN3.3V High Electron Mobility Transistor
CGHV96050F2 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) on a Silicon Carbide (SiC) substrate. Its functions and applications are as follows:

Functions

  • High - frequency operation: It operates in the frequency range of 8.4 - 9.6 GHz, making it suitable for high - frequency applications.
  • Low - power degradation: It has a power degradation of less than 0.1 dB, which means it can maintain stable performance with low - power loss during operation.
  • Excellent power - added efficiency: Compared with other technologies, this GaN internal - matched FET can provide excellent power - added efficiency. GaN has superior performance compared to silicon or gallium arsenide, with a higher breakdown voltage, a higher saturated electron drift velocity, and a higher thermal conductivity. Compared with GaAs transistors, GaN HEMTs also offer a higher power density and a wider bandwidth.
  • Optimal electrical and thermal performance: Housed in a metal / ceramic flange package, it achieves optimal electrical and thermal performance.

Applications

  • Marine radar: It is used in marine radar systems for detecting targets at sea, such as ships and obstacles, helping to ensure the safety of navigation.
  • Weather monitoring: It can be applied to weather - monitoring radar to detect meteorological phenomena such as clouds, rain, and snow, providing data support for weather forecasting and climate research.
  • Air traffic control: In air traffic control systems, it is used in radar equipment to monitor the position and flight path of aircraft, ensuring the safety and order of air traffic.
  • Maritime vessel traffic control: It helps monitor and manage the traffic of vessels in ports and shipping lanes, improving traffic efficiency and safety.
  • Port security: It is used in port security monitoring systems, such as radar - based intrusion detection systems, to detect and prevent unauthorized vessels from entering the port area.
  • Marine Radar – Used in shipborne navigation and collision avoidance systems.

  • Weather Monitoring – Supports high-power radar systems for meteorological observation.

  • Air Traffic Control (ATC) – Enhances radar and communication systems for aviation safety.

  • Maritime Vessel Traffic Control – Ensures efficient and secure shipping lane management.

  • Port Security & Surveillance – Used in high-frequency radar for coastal and port monitoring

  • Higher Power Density: More power in a smaller footprint compared to GaAs or Si-based transistors.

  • Better Thermal Performance: GaN-on-SiC technology improves heat dissipation.

  • Wider Bandwidth: Suitable for broadband applications without sacrificing efficiency.


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Who We AreFounded in 2009, Berton Electronics Limited has grown into a globally recognized distributor of electronic components, trusted by enterprises, research institutions, and enthusiasts across 50+ countries.  As an authorized partner to 500+ industry-leading brands—including TI, STM... Who We AreFounded in 2009, Berton Electronics Limited has grown into a globally recognized distributor of electronic components, trusted by enterprises, research institutions, and enthusiasts across 50+ countries.  As an authorized partner to 500+ industry-leading brands—including TI, STM...

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  • Berton Electronics Limited
  • Room 905 Dong Le Building , NanJi Road , Luohu District, Shenzhen,China.
  • https://www.integratedcircuitsics.com/

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