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Shenzhen ATFU Electronics Technology ltd

  • China,Shenzhen ,Guangdong
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China DRAM Flash Memory Chip SOP-54 64 Mbit 143 MHz ISSI IS42S16400J-7TLI For LCD
China DRAM Flash Memory Chip SOP-54 64 Mbit 143 MHz ISSI IS42S16400J-7TLI For LCD

  1. China DRAM Flash Memory Chip SOP-54 64 Mbit 143 MHz ISSI IS42S16400J-7TLI For LCD

DRAM Flash Memory Chip SOP-54 64 Mbit 143 MHz ISSI IS42S16400J-7TLI For LCD

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union,Paypal
Supply Ability 100000pcs
Delivery Time 1-3Days
Packaging Details BOX
Series IC
Voltage 3.3V
Feature DRAM Memory Chip
Application LCD Monitors, Flat Panel TV, Printers, GPS, MP3
Package SOIC-54
Clock frequency 143 MHz
Brand Name ISSI
Model Number IS42S16400J-7TLI
Certification ROHS
Place of Origin Original Factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,Paypal Supply Ability 100000pcs
Delivery Time 1-3Days Packaging Details BOX
Series IC Voltage 3.3V
Feature DRAM Memory Chip Application LCD Monitors, Flat Panel TV, Printers, GPS, MP3
Package SOIC-54 Clock frequency 143 MHz
Brand Name ISSI Model Number IS42S16400J-7TLI
Certification ROHS Place of Origin Original Factory
High Light IS42S16400JIS42S1IS42S16400J-7TLI

IS42S16400J-7TLI DRAM Memory Chip SOP-54 64 Mbit 143 MHz ISSI brand

 

 

GENERAL DESCRIPTIONS
 

ISSI's 64Mb Synchronous DRAM is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

 

FEATURES
 
Clock frequency: 200, 166, 143, 133 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single 3.3V power supply
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Self refresh modes
Auto refresh (CBR)
4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
 
Overview
 
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits. The 64Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 64Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access. A self-timed row precharge initiated at the end of the burst sequenceisavailablewiththeAUTOPRECHARGEfunction enabled. Precharge one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followed by a READ or WRITE command. The ACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A11 select the row). The READ or WRITE commands in conjunction with address bits registered are used to select the starting column location for the burst access. Programmable READ or WRITE burst lengths consist of 1, 2, 4 and 8 locations, or full page, with a burst terminate option.
 
 
 

IS42S16400J-7TLI

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IS42S16100E-7TLI

IS42S16800F-7TLI

IS42S16160J-6BLI

IS42S16320B-7TL

IS42S32200L-7BLI

IS42S32400D-6BL

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Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Agent,Exporter

  • Year Established:

    2012

  • Total Annual:

    500,000-100,0000

  • Employee Number:

    100~120

  • Ecer Certification:

    Active Member

ATFU Electronics LTD is a professional distributor of imported original integrated circuit chip with 7 years experience.   ATFU mainly focus on LED Driver IC, MCU chip, Flash memory chip and programmerable chip IC at the very beginning. With the development of ATFU, also based on the v... ATFU Electronics LTD is a professional distributor of imported original integrated circuit chip with 7 years experience.   ATFU mainly focus on LED Driver IC, MCU chip, Flash memory chip and programmerable chip IC at the very beginning. With the development of ATFU, also based on the v...

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  • Shenzhen ATFU Electronics Technology ltd
  • Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031
  • https://www.atfuic.com/

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