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ISSI's 64Mb Synchronous DRAM is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
FEATURES
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
Overview
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits. The 64Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 64Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access. A self-timed row precharge initiated at the end of the burst sequenceisavailablewiththeAUTOPRECHARGEfunction enabled. Precharge one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followed by a READ or WRITE command. The ACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A11 select the row). The READ or WRITE commands in conjunction with address bits registered are used to select the starting column location for the burst access. Programmable READ or WRITE burst lengths consist of 1, 2, 4 and 8 locations, or full page, with a burst terminate option.
IS42S16400J-7TLI
IS42S16400F-7TLI
IS42S16100E-7TLI
IS42S16800F-7TLI
IS42S16160J-6BLI
IS42S16320B-7TL
IS42S32200L-7BLI
IS42S32400D-6BL
IS42S32800D-7TLI
Company Details
Bronze Gleitlager
,
Bronze Sleeve Bushings
and
Graphite Plugged Bushings
from Quality China Factory
Business Type:
Distributor/Wholesaler,Agent,Exporter
Year Established:
2012
Total Annual:
500,000-100,0000
Employee Number:
100~120
Ecer Certification:
Active Member
ATFU Electronics LTD is a professional distributor of imported original integrated circuit chip with 7 years experience.
ATFU mainly focus on LED Driver IC, MCU chip, Flash memory chip and programmerable chip IC at the very beginning.
With the development of ATFU, also based on the v... ATFU Electronics LTD is a professional distributor of imported original integrated circuit chip with 7 years experience.
ATFU mainly focus on LED Driver IC, MCU chip, Flash memory chip and programmerable chip IC at the very beginning.
With the development of ATFU, also based on the v...