Brand Name | INFI |
Place of Origin | China |
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Product Specification
Brand Name | INFI | Place of Origin | China |
Applications
BDD (Boron-Doped Diamond) electrodes excel in degrading complex organic pollutants across industries:
Pharmaceutical/Chemical Waste
Petrochemical & Coking Byproducts
Textile Dyes & Tanning Effluents
Landfill Leachate & Explosive Residues
Pulp/Paper & Distillery Wastewater
No. | Product Name | Substrates | Specs | Unit |
1 | BDD Electrode | Silicon, single side coated | 5*5*0.55mm | Piece |
2 | BDD Electrode | Silicon, double side coated | 5*5*1.0mm 2 holes open | Piece |
3 | BDD Electrode | Silicon, double side coated | 5*5*1.0mm 4 holes open | Piece |
4 | BDD Electrode | Silicon, double side coated | 8*6*1 Slotting | Piece |
5 | BDD Electrode | Silicon, double side coated | 7*7*0.5mm | Piece |
6 | BDD Electrode | Silicon, single side coated | 10*10*0.625mm | Piece |
7 | BDD Electrode | Silicon, double side coated | 10*10*0.625mm | Piece |
8 | BDD Electrode | Silicon, double side coated | 10*10*0.5mm | Piece |
Performance Advantages
Superior Efficiency: Outperforms PbO₂/Pt electrodes in organic degradation with 30% lower energy consumption
Eco-Safe Ozone Generation: Electrolyte-free ozone production for water purification
Extreme Durability: Resists corrosion in aggressive chemical environments
Semiconductor Properties
Ultrawide Bandgap: 5.47 eV (5× silicon’s 1.1 eV) enables high-temperature/high-frequency device operation
Thermal Conductivity: 2,200 W/mK (5× copper) reduces component size/weight in amplifiers & lasers
Electron Mobility: Highest hole mobility among wide-bandgap materials, ideal for millimeter-wave ICs
Technical Metrics
Johnson Index: 8,200 (vs. 410 for SiC)
Baliga Index: Optimal for power switching systems
Negative Electron Affinity: Enables cold cathode applications
Key Features
Adjustable Thermal Conductivity: 1,000–1,800 W/mK (9× silicon’s 139 W/mK)
Precision Engineering:
Thickness Tolerance: ±25 μm
Surface Flatness: <4 μm/cm
Growth Side Finish: <100 nm Ra
Nucleation Side Finish: <30 nm Ra
Standard Specifications
Dimensions: Up to Ø65 mm (customizable)
Thickness:
Raw: 0.3–1.5 mm
Polished: 0.2–1.0 mm
Density: 3.5 g/cm³
Young’s Modulus: 1,000–1,100 GPa
Thermal Applications
High-power laser diode mounts
Integrated circuit heat spreaders
Compact thermal solutions for aerospace electronics
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Seller
Year Established:
2008
Total Annual:
300,000-500,000
Employee Number:
45~70
Ecer Certification:
Verified Supplier
Shaper Diamond Technology Co., Ltd. was established in 2008 in Zhuzhou City, Hunan Province, China. Since its inception, the company has been dedicated to researching, developing, producing, and selling HPHT synthetic diamond and superhard material products. Over the years, Shaper Diamond has contin... Shaper Diamond Technology Co., Ltd. was established in 2008 in Zhuzhou City, Hunan Province, China. Since its inception, the company has been dedicated to researching, developing, producing, and selling HPHT synthetic diamond and superhard material products. Over the years, Shaper Diamond has contin...
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