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ShenzhenYijiajie Electronic Co., Ltd.

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China G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical
China G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical

  1. China G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical

G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical

  1. MOQ: 1PCS
  2. Price: Negotiable
  3. Get Latest Price
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 5000PCS
Delivery Time 5-8 work days
Packaging Details Standard packaging
Temperature Coefficient of Sensitivity 1.08 times/℃
Storage Temperature Range -55℃ – 125℃
Operating Temperature Range -40℃ – 100℃
Maximum Reverse Voltage (Vᵣₘₐₓ) 20 V
Shunt Resistance 300~1200 MΩ
Junction Capacitance Typ. 4 pF
Model Number G12181-003A
Place of Origin Japan

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  1. Product Details
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Product Specification

Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram Supply Ability 5000PCS
Delivery Time 5-8 work days Packaging Details Standard packaging
Temperature Coefficient of Sensitivity 1.08 times/℃ Storage Temperature Range -55℃ – 125℃
Operating Temperature Range -40℃ – 100℃ Maximum Reverse Voltage (Vᵣₘₐₓ) 20 V
Shunt Resistance 300~1200 MΩ Junction Capacitance Typ. 4 pF
Model Number G12181-003A Place of Origin Japan
High Light Infrared photoelectric sensor for optical communicationInGaAs PIN photodiode sensorPhotoelectric sensor with InGaAs technology

 

             G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems   

 

Application Areas:

  • Optical Communication Systems: Detects high-speed NIR signals (1.3/1.55 μm bands) in fiber optic transceivers, supporting reliable data transmission in telecom networks.
  • Precision Optical Power Meters: Serves as a core sensing component for measuring NIR optical power in laboratory testing, fiber optic maintenance, and laser calibration.
  • Laser Monitoring & Testing: Enables real-time monitoring of laser output intensity (e.g., in industrial lasers, medical lasers) and life-cycle testing of laser diodes.
  • Near-Infrared Photometry: Used in biochemical analysis, material science, and environmental monitoring to measure NIR light absorption, transmission, or reflection.
  • Aerospace & Defense: Suitable for NIR-based target detection, remote sensing, and optical guidance systems (thanks to wide temperature range and low noise).

Key Features:

  • Broad NIR Coverage: 0.9–1.7 μm spectral range aligns with key wavelengths for communication, laser, and photometry applications.
  • Ultra-Low Dark Current: Max. 0.3 nA dark current minimizes background noise, ensuring high signal-to-noise ratio (SNR) for low-light detection.
  • High-Speed Response: 800 MHz cut-off frequency supports fast signal detection, ideal for high-bandwidth optical communication or pulsed laser monitoring.
  • Compact & Durable Package: TO-18 metal package offers mechanical stability, easy integration into circuits, and compatibility with standard optical mounts.
  • Consistent Sensitivity: Low temperature coefficient of sensitivity ensures reliable performance across varying ambient temperatures.

Parameter

Specification (Typ. / Max.)

Test Conditions

Photosensitive Area φ0.3 mm -
Number of Sensing Elements 1 (Single-Element) -
Cooling Method Non-cooled (Passive Ambient Cooling) -
Spectral Response Range 0.9 – 1.7 μm Covers critical NIR bands (e.g., 1.3/1.55 μm for telecom)
Peak Sensitivity Wavelength ~1.55 μm -
Photosensitivity Typ. 1.1 A/W λ = 1.55 μm, Reverse Voltage (Vᵣ) = 5V, Tₐ = 25℃
Dark Current Max. 0.3 nA Vᵣ = 5V, Tₐ = 25℃, No Incident Light
Cut-off Frequency (-3dB) Typ. 800 MHz Vᵣ = 5V, Load Resistance (Rₗ) = 50Ω, λ = 1.3 μm
Junction Capacitance Typ. 4 pF Vᵣ = 5V, Frequency (f) = 1 MHz
Noise Equivalent Power (NEP) Typ. 3.5×10⁻¹⁵ W/Hz¹/² λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Detectivity (D*) Typ. 7.2×10¹² cm·Hz¹/²/W λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Shunt Resistance 300 – 1200 MΩ Vᵣ = 0V, Tₐ = 25℃, No Light
Maximum Reverse Voltage (Vᵣₘₐₓ) 20 V Tₐ = 25℃
Operating Temperature Range -40℃ – 100℃ Stable performance in harsh industrial environments
Storage Temperature Range -55℃ – 125℃ -
Temperature Coefficient of Sensitivity 1.08 times/℃ Relative to 25℃, λ = 1.55 μm

 

 

Company Details

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  • Business Type:

    Manufacturer,Trading Company

  • Year Established:

    2006

  • Total Annual:

    900000-1000000

  • Employee Number:

    50~80

  • Ecer Certification:

    Verified Supplier

Yijiajie Electronics is a full range of silicon pressure sensors from the United States, FREESCALE/, GE, MEAS, SMI, and a full range of sensing and control products from the United States pressure, temperature and humidity, gas flow, current, Hall effect, etc., Japan HAMAMATSU flame, UV sensors, ph... Yijiajie Electronics is a full range of silicon pressure sensors from the United States, FREESCALE/, GE, MEAS, SMI, and a full range of sensing and control products from the United States pressure, temperature and humidity, gas flow, current, Hall effect, etc., Japan HAMAMATSU flame, UV sensors, ph...

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  • ShenzhenYijiajie Electronic Co., Ltd.
  • Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
  • https://www.oxygengassensors.com/

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