Products
Manufacturer of a wide range of products which include SiO2 Fused Quartz And Fused Silica Wafer In Infrared And Ultraviolet Spectrum,Fused Quartz Glass Wafers As The Si-Diaphragms Mechanical Stabilization,C-plane 0001 Sapphire Waf...
MOQ: 5 pcs
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 20000 pcs/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette/ Jar package, vaccum sealed | 
| Material | Fused Silica Wafer | 
| Structure | Amorphous Phase | 
| Diameter | 76.2mm, 100mm, 150mm | 
| Thickness | 375um, 525um, 675um | 
| Warp | <40um, <70um | 
| BOW | ±30um, ±40um | 
| TTV | <5um, <10um | 
| Transmission | Infrared and Ultraviolet Spectrum | 
| Brand Name | BonTek | 
| Model Number | Fused Silica, Fused Quartz | 
| Certification | ISO:9001, ISO:14001 | 
| Place of Origin | China | 
 
                            MOQ: 5 pcs
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 20000 pcs/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette/ Jar package, vaccum sealed | 
| Material | Glass Substrate | 
| Series | Fused Quartz, Fused Silica, Borosilicate | 
| Brand | Schott, Feilihua, Corning | 
| Use | Etching Structuring Masks | 
| Dia. | 4inch, 6inch, 8inch, 12inch | 
| Thickness | 0.5±0.025mm, 1±0.025mm, etc. | 
| Edge Profile | "C" Shape | 
| Surface | Single / Double Side Polish | 
| Brand Name | BonTek | 
| Model Number | Fused Silica, Fused Quartz | 
| Certification | ISO:9001, ISO:14001 | 
| Place of Origin | China | 
 
                            MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 10000 pieces/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette, Jar, Film package | 
| Material | Sapphire Wafer | 
| Growth | Kyropoulos method | 
| Melting Point | 2040 °C | 
| Thermal Conductivity | 27.21 W/(m x K) at 300 K | 
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K | 
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter | 
| Specific Heat Capacity | 419 J/(kg x K) | 
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz | 
| Brand Name | BonTek | 
| Model Number | Sapphire (Al2O3) | 
| Certification | ISO:9001 | 
| Place of Origin | China | 
 
                            MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 10000 pieces/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette, Jar, Film package | 
| Material | Al2O3 Wafer | 
| Purity | 99.999% | 
| Melting Point | 2040 °C | 
| Thermal Conductivity | 27.21 W/(m x K) at 300 K | 
| Diameter | 5 inch, 125mm | 
| Hardness | 9.0 | 
| Specific Heat Capacity | 419 J/(kg x K) | 
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz | 
| Brand Name | BonTek | 
| Model Number | Sapphire (Al2O3) | 
| Certification | ISO:9001 | 
| Place of Origin | China | 
 
                            MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 10000 pieces/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette, Jar, Film package | 
| Material | Sapphire (Al2O3) Crystal | 
| Type | Single Crystal | 
| Color | White / Red / Blue | 
| Purity | 99.999% | 
| Surface | Double side polish | 
| VIS range | 85% | 
| Application | Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics | 
| Industry | Led,optical Glass,eli-ready Wafer | 
| Brand Name | BonTek | 
| Model Number | Sapphire (Al2O3) | 
| Certification | ISO:9001 | 
| Place of Origin | China | 
 
                            MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 10000 pieces/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette, Jar, Film package | 
| Material | Sapphire Wafer | 
| Orientation | C-axis [0001], R-axis [1-102], A-axis [11-20], M-axis [10-10] | 
| Diameter | Φ1inch to 8inch | 
| Refractive Index | 1.75449 (o) 1.74663 (e) at 1.06 microns | 
| Reflection Loss | at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2% | 
| Index of Absorption | 0.3 x 10-3 cm-1 at 2.4 microns | 
| Specific Heat Capacity | 419 J/(kg x K) | 
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz | 
| Brand Name | BonTek | 
| Model Number | Sapphire (Al2O3) | 
| Certification | ISO:9001 | 
| Place of Origin | China | 
 
                            MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 10000 pieces/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette, Jar, Film package | 
| Material | Sapphire Wafer | 
| Density | 3.97 g/cm3 | 
| Melting Point | 2040 degrees C | 
| Thermal Conductivity | 27.21 W/(m x K) at 300 K | 
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K | 
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter | 
| Specific Heat Capacity | 419 J/(kg x K) | 
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz | 
| Brand Name | BonTek | 
| Model Number | Sapphire (Al2O3) | 
| Certification | ISO:9001 | 
| Place of Origin | China | 
 
                            MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 10000 pieces/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette, Jar, Film package | 
| Material | Sapphire Wafer | 
| Density | 3.97 g/cm3 | 
| Melting Point | 2040 degrees C | 
| Thermal Conductivity | 27.21 W/(m x K) at 300 K | 
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K | 
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter | 
| Specific Heat Capacity | 419 J/(kg x K) | 
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz | 
| Brand Name | BonTek | 
| Model Number | Sapphire (Al2O3) | 
| Certification | ISO:9001 | 
| Place of Origin | China | 
 
                            MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 10000 pieces/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette, Jar, Film package | 
| Material | Sapphire Wafer | 
| Type | Single Crystal | 
| Application | orward Looking Infra Red | 
| Growth Method | Horizontally Directed Crystallization (HDC) | 
| Melting Point | 2040 degrees C | 
| Young's Modulus (E) | 335 GPa | 
| Shear Modulus (G) | 148.1 GPa | 
| Bulk Modulus (K) | 240 GPa | 
| Brand Name | BonTek | 
| Model Number | Sapphire (Al2O3) | 
| Certification | ISO:9001 | 
| Place of Origin | China | 
 
                            MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T | 
| Supply Ability | 10000 pieces/Month | 
| Delivery Time | 1-4 weeks | 
| Packaging Details | Cassette, Jar, Film package | 
| Material | Sapphire Wafer | 
| Growth Method | Horizontally Directed Crystallization (HDC) | 
| Advantage | Hardness9.0,Wear Resistant | 
| Color | White / Red / Blue | 
| Primary Flat | 16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches | 
| Flat Orientation | A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2° | 
| Application | Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics | 
| Industry | Led,optical Glass,eli-ready Wafer | 
| Brand Name | BonTek | 
| Model Number | Sapphire (Al2O3) | 
| Certification | ISO:9001 | 
| Place of Origin | China | 
 
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