Hangzhou Freqcontrol Electronic Technology Ltd.
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Al2O3 Wafer |
| Purity | 99.999％ |
| Melting Point | 2040 °C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Diameter | 3 inch, 76.2mm |
| Hardness | 9.0 Mohs |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
View Detail Information
Explore similar products
LiNbO3 LiTaO3 Quartz Piezo Wafer For Piezoelectric Sensor and Transducer
2 Inch To 8 Inch Piezoelectric Wafer LN LT Quartz With Laser Marking
Customized 6 Inch 8 Inch Piezo Wafer For Semiconductor POI And MEMS
2'' 3'' Ultra-Thin Piezoelectric Wafer 50um Quartz Film And LT Film For Piezo
Product Specification
| Payment Terms | T/T | Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks | Packaging Details | Cassette, Jar, Film package |
| Material | Al2O3 Wafer | Purity | 99.999％ |
| Melting Point | 2040 °C | Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Diameter | 3 inch, 76.2mm | Hardness | 9.0 Mohs |
| Specific Heat Capacity | 419 J/(kg x K) | Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek | Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 | Place of Origin | China |
| High Light | Sapphire Substrate Optical Crystal Windows ，3 Inch Sapphire Substrate Wafer ，Dia 76.2mm Sapphire Wafer | ||
3 Inch Dia 76.2mm Sapphire Substrate Optical Crystal Windows
Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. The hardest of the oxide crystals, sapphire Al2O3 retains its high strength at high temperatures, has good thermal properties and excellent transparency. Sapphire Al2O3 optics is chemically resistant to many acids and alkalis at temperatures up to 1000 degrees C as well as to HF below 300 degrees C. These properties encourage its wide use of Sapphire Al2O3 optics in hostile environments where optical transmission in the range from the visible to the near infrared is required.
| Item | 3-inch C-plane(0001) 650μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 76.2 mm +/- 0.1 mm | |
| Thickness | 650 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 22.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 20 μm | |
| BOW | < 20 μm | |
| WARP | < 20 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, single piece packaging. | |
| PHYSICAL PROPERTIES of SAPPHIRE Al2O3 | |
| Density | 3.97 g/cm3 |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Young's Modulus (E) | 335 GPa |
| Shear Modulus (G) | 148.1 GPa |
| Bulk Modulus (K) | 240 GPa |
| Elastic Coefficients | C11=496 C12=164 C13=115 C33=498 C44=148 |
| Apparent Elastic Limit | 275 MPa (40,000 psi) |
| Poisson Ratio | 0.25 |
Acceptance Check
Company Details
Business Type:
Manufacturer,Trading Company
Year Established:
1999
Total Annual:
800M-1500M
Employee Number:
10~99
Ecer Certification：
Verified Supplier
Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin... Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin...
Get in touch with us
Leave a Message, we will call you back quickly!