| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire (Al2O3) Crystal |
| Type | Single Crystal |
| Growth Method | Horizontally Directed Crystallization (HDC) |
| Purity | 99.999% |
| Surface | DSP/SSP |
| Young's Modulus (E) | 335 GPa |
| Application | Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics |
| Industry | Led,optical Glass,eli-ready Wafer |
| Brand Name | CSIMC |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
View Detail Information
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Product Specification
| Payment Terms | T/T | Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks | Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire (Al2O3) Crystal | Type | Single Crystal |
| Growth Method | Horizontally Directed Crystallization (HDC) | Purity | 99.999% |
| Surface | DSP/SSP | Young's Modulus (E) | 335 GPa |
| Application | Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics | Industry | Led,optical Glass,eli-ready Wafer |
| Brand Name | CSIMC | Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 | Place of Origin | China |
| High Light | Double Side Polished Sapphire Wafer ,Ultrathin Sapphire Wafer ,Precision Engineering Sapphire Wafer | ||
Ultrathin Double Side Polished Sapphire Wafer for Precision Engineering
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OPTICAL PROPERTIES
| Transmission Range | 0.17 to 5.5 microns |
| Refractive Index | 1.75449 (o) 1.74663 (e) at 1.06 microns |
| Reflection Loss | at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2% |
| Index of Absorption | 0.3 x 10-3 cm-1 at 2.4 microns |
| dN/dT | 13.7 x 10-6 at 5.4 microns |
| dn/dm = 0 | 1.5 microns |
PHYSICAL PROPERTIES
| Density | 3.97 g/cm3 |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Young's Modulus (E) | 335 GPa |
| Shear Modulus (G) | 148.1 GPa |
| Bulk Modulus (K) | 240 GPa |
| Elastic Coefficients | C11=496 C12=164 C13=115 |
| Apparent Elastic Limit | 275 MPa (40,000 psi) |
| Poisson Ratio | 0.25 |
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Acceptance Check
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1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.
2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.
3. Please open the vacuum package in a clean room when the products are to be applied.
4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.
Company Details
Business Type:
Manufacturer,Trading Company
Year Established:
1999
Total Annual:
800M-1500M
Employee Number:
10~99
Ecer Certification:
Verified Supplier
Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin... Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin...
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