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SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
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China InAs Wafer Crystal Substrates N Type For MBE 99.9999% Monocrystalline
China InAs Wafer Crystal Substrates N Type For MBE 99.9999% Monocrystalline

  1. China InAs Wafer Crystal Substrates N Type For MBE 99.9999% Monocrystalline
  2. China InAs Wafer Crystal Substrates N Type For MBE 99.9999% Monocrystalline
  3. China InAs Wafer Crystal Substrates N Type For MBE 99.9999% Monocrystalline

InAs Wafer Crystal Substrates N Type For MBE 99.9999% Monocrystalline

  1. MOQ: 3pcs
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T, Western Union
Supply Ability 500pcs
Delivery Time 2-4weeks
Packaging Details single wafer package in 1000-grade cleaning room
Material Indium arsenide (InAs) wafer substrate
growth method CZ
SIZE 2inch 3inch 4inch
Thickness 300-800um
application III-V direct bandgap semiconductor material
surface Polished or Etched
package single wafer box
Type N-type and P-type
Brand Name zmkj
Model Number Indium arsenide (InAs)
Certification ROHS
Place of Origin CHINA

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Product Specification

Payment Terms T/T, Western Union Supply Ability 500pcs
Delivery Time 2-4weeks Packaging Details single wafer package in 1000-grade cleaning room
Material Indium arsenide (InAs) wafer substrate growth method CZ
SIZE 2inch 3inch 4inch Thickness 300-800um
application III-V direct bandgap semiconductor material surface Polished or Etched
package single wafer box Type N-type and P-type
Brand Name zmkj Model Number Indium arsenide (InAs)
Certification ROHS Place of Origin CHINA
High Light InAs Wafer Crystal SubstratesN Type InAs WaferMBE InAs substrate

2inch 3inch 4inch InAs Wafer Crystal Substrates N-Type For MBE 99.9999% Monocrystalline
 

Introduce of InAs substrate

Indium InAs or indium mono-arsenide is a semiconductor composed of indium and arsenic. It has the appearance of a gray cubic crystal with a melting point of 942°C. Indium arsenide is used to construct infrared detectors with a wavelength range of 1-3.8um. The detector is usually a photovoltaic photodiode. Cryogenic cooling detectors have lower noise, but InAs detectors can also be used for high-power applications at room temperature. Indium arsenide is also used to make diode lasers. Indium arsenide is similar to gallium arsenide and is a direct band gap material. Indium arsenide is sometimes used with indium phosphide. Alloy with gallium arsenide to form indium arsenic - a material whose band gap depends on the In/Ga ratio. This method is mainly similar to alloying indium nitride with gallium nitride to produce indium nitride. Indium arsenide is known for its high electron mobility and narrow band gap. It is widely used as a terahertz radiation source because it is a powerful light-amber emitter.

Features of InAs wafer:

♦ With high electron mobility and mobility ratio (μe/μh=70), it is an ideal material for Hall devices.

♦ MBE can be grown with GaAsSb, InAsPSb, and InAsSb multi-epitaxial materials.

♦ Liquid sealing method (CZ), ensure the purity of the material can reach 99.9999% (6N).

♦ All substrates are precisely polished and filled with a protective atmosphere to meet the requirements of Epi-Ready.

♦Crystal direction selection: Another crystal direction is available, e.g. (110).

♦ Optical measurement techniques, such as ellipsometry, ensure a clean surface on each substrate.
 

InAs Wafer Specifications
Diameter Slices2"3"
Orientation(100) +/-0.1°(100) +/- 0.1°
Diameter (mm)50.5 +/- 0.576.2 +/- 0.4
Flat OptionEJEJ
Flat Tolerance+/- 0.1°+/- 0.1°
Major Flat Length (mm)16 +/- 222 +/- 2
Minor Flat Length (mm)8 +/- 111 +/- 1
Thickness (um)500 +/- 25625 +/- 25
Electrical and Dopant Specifications
DopantType
Carrier
Concentration cm-3
Mobility
cm^2•V^-1•s^-1
Undopedn-type(1-3)*10^16>23000
Low Sulphurn-type(4-8)*10^1625000-15000
High Sulphurn-type(1-3)*10^1812000-7000
Low Zincp-type(1-3)*10^17350-200
High Zincp-type(1-3)*10^18250-100
E.P.D. cm^-22" <= 15,000
3" <= 50,000
Flatness Specifications
Wafer Form2"3"
Polish/EtchedTTV(um)<12<15
Bow(um)<12<15
Warp(um)<12<15
Polish/PolishTTV(um)<12<15
Bow(um)<12<15
Warp(um)<12<15

---FAQ –

Q: Are you a trading company or manufacturer?

A: zmkj is a trading company but has a sapphire manufacturer 
as a supplier of semiconductor materials wafers for a wide span of applications.

Q: How long is your delivery time?

A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock, it is according to quantity.

Q: Do you provide samples? is it free or extra?

A: Yes, we could offer the sample for free charge but do not pay the cost of freight.

Q: What is your terms of payment ?

A: Payment<= 1000 USD, 100% in advance. Payment>=1000USD,
50% T/T in advance,balance before shippment.
If you have another question, pls feel free to contact us as below:

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...

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Get in touch with us

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.sapphire-substrate.com/

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