Product Specification

Silicon wafer 4 inch thickness 500+/-20 Resistivity 1-10 ohm·cm Orientation100 double side polish

Product abstract

Our Precision Ultra-Pure Silicon Substrate is meticulously engineered to serve as the foundation for high-performance semiconductor devices. Crafted with advanced float-zone mono-crystalline silicon technology, this substrate offers exceptional purity and uniformity, ensuring superior electronic properties. With precise control over crystal structure and impurity levels, our substrate enables the fabrication of cutting-edge semiconductor devices with enhanced reliability and performance. Whether used in integrated circuits, power electronics, or photovoltaic applications, our silicon substrate empowers innovation across various industries, driving advancements in technology and engineering.

Product showcase

Product properties 

1. Ultra-Pure Silicon: Our substrate is composed of float-zone mono-crystalline silicon, ensuring exceptional purity levels crucial for high-performance semiconductor devices.

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3. Uniform Crystal Structure: The substrate boasts a uniform crystal structure, free from defects or irregularities, ensuring consistent electrical properties across the entire surface.

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5. Low Impurity Levels: With meticulous control over impurity concentrations, our substrate exhibits low levels of dopants and contaminants, minimizing unwanted electronic effects and ensuring device reliability.

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7. High Thermal Stability: The substrate demonstrates high thermal stability, enabling reliable operation across a wide range of temperatures without compromising performance or integrity.

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9. Precise Dimensional Control: Each substrate is manufactured with precise dimensional control, ensuring consistent thickness and flatness to facilitate accurate device fabrication processes.

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11. Excellent Surface Quality: Our substrate features a smooth and defect-free surface finish, essential for the deposition of thin films and the formation of high-quality device interfaces.

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13. Customizable Specifications: We offer a range of customizable specifications, including doping concentration, resistivity, and orientation, to meet the specific requirements of diverse semiconductor applications.

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15. Compatibility with Semiconductor Processes: The substrate is compatible with various semiconductor processing techniques, including epitaxy, lithography, and etching, enabling seamless integration into existing fabrication workflows.

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17. Electrical Performance: Our substrate exhibits excellent electrical properties, including high carrier mobility, low leakage currents, and uniform electrical conductivity, essential for optimizing device performance and efficiency.

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19. Reliability and Longevity: Designed for long-term reliability, our substrate undergoes rigorous quality control measures to ensure consistent performance and durability throughout its operational lifespan.

20. FZ monocrystalline silicon specification

     

    Type	Conduction Type	Orientation	Diameter(mm)	Conductivity(Ω•cm)
    High resistance	N&P	<100>&<111>	76.2-200	>1000
    NTD	N	<100>&<111>	76.2-200	30-800
    CFZ	N&P	<100>&<111>	76.2-200	1-50
    GD	N&P	<100>&<111>	76.2-200	0.001-300

     

     

     

    Wafer specification

     

    Ingot Parameter	Item	Description
    	Growing method	FZ
    	Orientation	<111>
    	Off-orientation	4±0.5 degree to the nearest <110>
    	Type/Dopant	P/Boron
    	Resistivity	10-20 W.cm
    	RRV	≤15% (Max edge-Cen)/Cen

     
     

     

     

     

    Wafer Parameter	Item	Description
    	Diameter	150±0.5 mm
    	Thickness	675±15 um
    	Primary Flat Length	57.5±2.5 mm
    	Primary Flat Orientation	<011>±1 degree
    	Secondary Flat Length	None
    	Secondary Flat Orientation	None
    	TTV	≤5 um
    	Bow	≤40 um
    	Warp	≤40 um
    	Edge Profile	SEMI Standard
    	Front Surface	Chemical-Mechenical Polishing
    	LPD	≥0.3 um@≤15 pcs
    	Back Surface	Acid Etched
    	Edge Chips	None
    	Package	Vacuum Packing; Inner Plastic, Outer Aluminum

21. Product applications

     

    Integrated Circuits (ICs): Our precision ultra-pure silicon substrate serves as a fundamental building block for the fabrication of ICs used in a wide range of electronic devices, including smartphones, computers, and automotive electronics.

    Power Electronics: The substrate is utilized in power semiconductor devices such as diodes, transistors, and thyristors, enabling efficient energy conversion and control in applications such as electric vehicles, renewable energy systems, and industrial automation.

    Photovoltaics (PV): Our substrate plays a crucial role in the manufacturing of high-efficiency solar cells, providing a stable and uniform base for the deposition of semiconductor layers and metal contacts, leading to improved solar energy conversion efficiency.

    Light-Emitting Diodes (LEDs): In LED manufacturing, our substrate serves as a platform for epitaxial growth of semiconductor layers, ensuring uniformity and reliability in LED performance for applications such as lighting, displays, and automotive lighting.

    Microelectromechanical Systems (MEMS): Our substrate facilitates the fabrication of MEMS devices, including accelerometers, gyroscopes, and pressure sensors, enabling precise sensing and control in consumer electronics, automotive systems, and medical devices.

    Radio Frequency (RF) Devices: The substrate is used in the production of RF devices such as RF amplifiers, oscillators, and filters, supporting wireless communication systems, satellite communication, and radar systems with high-frequency operation and reliability.

    Optoelectronic Devices: Our substrate enables the development of optoelectronic devices such as photodetectors, optical modulators, and laser diodes, contributing to applications in telecommunications, data communication, and optical sensing.

    Biomedical Sensors: In biomedical engineering, our substrate is employed for the fabrication of biosensors and bioelectronic devices for applications such as medical diagnostics, drug delivery systems, and implantable medical devices.

    Aerospace and Defense: The substrate is utilized in aerospace and defense applications, including radar systems, communication satellites, and missile guidance systems, where reliability, stability, and performance are critical in harsh environments.

    Emerging Technologies: Our substrate supports advancements in emerging technologies such as quantum computing, neuromorphic computing, and advanced sensors, driving innovation in computing, artificial intelligence, and sensing applications.