Product Specification
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| Payment Terms |
T/T |
Supply Ability |
By case |
| Delivery Time |
2-4 weeks |
Packaging Details |
custom cartons |
| Brand Name |
ZMSH |
Model Number |
Semiconductor Ion Implantation Equipment |
| Place of Origin |
China |
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Semiconductor Ion Implantation Equipment
Ion implantation is the primary doping method in the semiconductor industry. It is a technique that injects specific elements into a target material by utilizing electric fields for acceleration, as well as magnetic fields for mass separation and beam collimation; through high-precision control, it ensures the uniformity of the implanted dose.
Owing to its advantages—including precise control, anisotropic characteristics, and room-temperature processing—it is widely applied in fields such as integrated circuits, compound semiconductors, and display panels, thereby establishing itself as the mainstream doping process. Ion implantation equipment features complex structures and presents significant technical challenges, making it one of the critical pieces of machinery in the semiconductor manufacturing workflow.
Leveraging over two decades of experience in semiconductor R&D and manufacturing, coupled with continuous technological innovation, we have achieved breakthroughs in several key technologies—including electrostatic acceleration, dose control, and electromagnetic mass separation—leading to the development of two medium-current ion implanter models. The company remains committed to expanding its product portfolio to achieve comprehensive coverage of ion implantation equipment, thereby providing the semiconductor manufacturing sector with a complete suite of ion implantation solutions.
Ai300 Medium Beam Ion Implanter (12-inch)
(1) Product Overview
The Ai300 is a medium beam ion implantation system designed for 12-inch wafer processing in advanced semiconductor manufacturing. It is primarily used for medium-dose and medium-to-high energy implantation steps, including well formation, channel engineering, and lightly doped drain (LDD) structures in CMOS processes. The system provides precise control of dopant depth and concentration profiles through stable beam delivery and accurate angle control, enabling optimization of device electrical characteristics.
(2) Key Specifications
- Wafer size: 12 inch
- Energy range: 5–300 keV
- Implant species: C, B, P, N, He, Ar
- Implant angle: 0°–45° (accuracy ≤0.1°)
- Dose range: 1E11–1E16 ions/cm²
- Beam stability: ≤10%/hour
- Beam parallelism: ≤0.1°
- Throughput: ≥500 WPH
- Uniformity/Repeatability: ≤0.5%
(3) Technical Features and Advantages
The Ai300 integrates a high-stability ion source and advanced beam control system, ensuring minimal beam fluctuation during extended operation. Its excellent beam parallelism guarantees uniform dopant distribution across the wafer, which is critical for advanced nodes. In addition, its high throughput supports high-volume manufacturing (HVM) requirements in 12-inch fabs.
(4) Applications
- Advanced logic devices (CMOS, FinFET)
- DRAM and NAND memory
- Precision doping processes
FAQ
1. What is ion implantation and why is it important in semiconductor manufacturing?
Ion implantation is a process in which dopant ions are accelerated and implanted into a semiconductor substrate to modify its electrical properties. Compared with traditional diffusion methods, ion implantation offers precise control over dopant concentration, depth, and lateral distribution, making it indispensable for advanced semiconductor device fabrication.
2. What is the difference between medium beam and high beam ion implanters?
Medium beam implanters are typically used for precision doping applications with moderate dose and wider energy ranges, such as well formation and channel engineering.
High beam implanters, on the other hand, are optimized for high-dose implantation with higher beam currents, commonly used for source/drain formation and contact engineering.
3. How do I choose the right ion implantation system for my process?
The selection depends on several key factors:
- Dose requirement (low/medium vs high dose)
- Energy range (shallow vs deep junction)
- Wafer size (6/8 inch vs 12 inch)
- Material type (Si vs SiC)
For example:
- Use Ai300 for advanced CMOS precision doping
- Use Ai80HC for high-dose source/drain processes
- Use Ai350HT for SiC high-temperature implantation
Company Details
Bronze Gleitlager
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Bronze Sleeve Bushings
and
Graphite Plugged Bushings
from Quality China Factory
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Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
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Total Annual:
1000000-1500000
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Ecer Certification：
Verified Supplier
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