SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 5set/month |
| Delivery Time | 6-8moth |
| Heating Method | Graphite Resistance Heating |
| Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz |
| Max Heating Temperature | 2300°C |
| Rated Heating Power | 80kW |
| Heater Power Range | 35kW ~ 40kW |
| Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h |
| Crystal Growth Cycle | 5D ~ 7D |
| Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) |
| Brand Name | ZMSH |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 5set/month |
| Delivery Time | 6-8moth | Heating Method | Graphite Resistance Heating |
| Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz | Max Heating Temperature | 2300°C |
| Rated Heating Power | 80kW | Heater Power Range | 35kW ~ 40kW |
| Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h | Crystal Growth Cycle | 5D ~ 7D |
| Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) | Brand Name | ZMSH |
| Place of Origin | China | ||
| High Light | 8 inch SiC Ingot Growth Furnace ，6 inch SiC Ingot Growth Furnace ，PVT SiC Ingot Growth Furnace | ||
High Efficiency SiC Ingot Growth Furnace for 4-inch, 6-inch, and 8-inch Crystals Using PVT, Lely, and TSSG Methods
Abstract of SiC Ingot Growth Furnance
The SiC Ingot Growth Furnace utilizes graphite resistance heating for efficient silicon carbide crystal growth. It can reach a maximum temperature of 2300°C with a rated power of 80kW. The furnace consumes between 3500kW·h and 4500kW·h per cycle, with crystal growth durations ranging from 5 to 7 days. It measures 2150mm x 1600mm x 2850mm and has a cooling water flow rate of 6m³/h. Operating in a vacuum environment with argon and nitrogen gases, this furnace ensures the production of high-quality SiC ingots with consistent performance and reliable output.
The photo of SiC Ingot Growth Furnance
Our SiC Ingot Growth Furnance' s Crystal Special Crystal Type
SiC has over 250 crystal structures, but only the 4HC type can be used for SiC power devices. ZMSH has successfully assisted clients in growing this specific crystal type multiple times using its own furnace.
Our SiC Ingot Growth Furnace is designed for high-efficiency silicon carbide (SiC) crystal growth, capable of processing 4-inch, 6-inch, and 8-inch SiC wafers. Using advanced techniques like PVT (Physical Vapor Transport), Lely, TSSG (Temperature Gradient Method), and LPE (Liquid Phase Epitaxy), our furnace supports high growth rates while ensuring optimal crystal quality.
The furnace is engineered to grow various SiC crystal structures, including the conductive 4H, semi-insulating 4H, and other crystal types, such as 6H, 2H, and 3C. These structures are crucial for the production of SiC power devices and semiconductors, which are essential for applications in power electronics, energy-efficient systems, and high-voltage devices.
Our SiC furnace ensures precise temperature control and uniform crystal growth conditions, enabling the production of high-quality SiC ingots and wafers for advanced semiconductor applications.
Our SiC Ingot Growth Furnance' s advantage
1.Unique thermal field design
The axial and radial temperature gradients can be precisely controlled, with the temperature profile being smooth and uniform. This results in a nearly flat crystal growth interface, maximizing the utilization of the crystal thickness.
Improved raw material efficiency: The thermal field is evenly distributed throughout the system, ensuring a more consistent temperature within the raw material. This significantly enhances powder utilization, reducing material waste.
The independence between axial and radial temperatures enables high-precision control of both gradients, which is critical for addressing crystal stress and minimizing dislocation density.
2.High control precision
The SiC Ingot Growth Furnace is meticulously engineered to produce high-quality SiC crystals, which are essential for a wide range of semiconductor applications, such as power electronics, optoelectronics, and energy-efficient technologies. SiC is a critical material in the fabrication of components that require excellent thermal conductivity, electrical performance, and long-lasting durability. Our furnace features advanced control systems designed to maintain consistent performance and superior crystal quality throughout the growth process.
The SiC Ingot Growth Furnace provides exceptional accuracy, with a power supply precision of 0.0005%, gas flow control accuracy of ±0.05 L/h, temperature regulation accuracy of ±0.5°C, and chamber pressure stability of ±10 Pa. These finely tuned parameters ensure a stable, homogeneous environment for crystal growth, which is crucial for producing high-purity SiC ingots and wafers with minimal defects.
The SiC Ingot Growth Furnace's key components, including the Proportional Valve, Mechanical Pump, Vacuum Chamber, Gas Flow Meter, and Molecular Pump, function together seamlessly to deliver reliable operation, enhance material utilization, and minimize defects. These features allow the furnace to produce SiC crystals that meet the stringent demands of the semiconductor industry.
ZMSH’s technology incorporates cutting-edge crystal growth techniques, ensuring the highest quality in SiC crystal production. With the rising demand for high-performance SiC components, our equipment is optimized to serve industries such as power electronics, renewable energy, and advanced technology, driving progress in energy-efficient solutions and sustainable innovations.
3. Automated operation
Automatic Response: Signal monitoring, signal feedback
Automatic Alarm: Over-limit warning, dynamic safety
Automatic Control: Real-time monitoring and storage of production parameters, remote access, and control.
Active Prompt: Expert system, human-machine interaction
ZMSH's SiC Furnace integrates advanced automation for optimal operational efficiency. It is equipped with automatic signal monitoring and feedback mechanisms, over-limit alarms, and real-time parameter control with remote monitoring capabilities. The system also provides proactive notifications for expert assistance and enables smooth interaction between the operator and the machine.
These features minimize human intervention, improve process control, and ensure the consistent production of high-quality SiC ingots, promoting efficiency in large-scale manufacturing operations.
Our SiC Ingot Growth Furnance's data sheet
| 6inch sic furnance | 8inch sic furnance | ||
| PROJECT | PARAMETER | PROJECT | PARAMETER |
| Heating Method | Graphite Resistance Heating | Heating Method | Graphite Resistance Heating |
| Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz | Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz |
| Max Heating Temperature | 2300°C | Max Heating Temperature | 2300°C |
| Rated Heating Power | 80kW | Rated Heating Power | 80kW |
| Heater Power Range | 35kW ~ 40kW | Heater Power Range | 35kW ~ 40kW |
| Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h | Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h |
| Crystal Growth Cycle | 5D ~ 7D | Crystal Growth Cycle | 5D ~ 7D |
| Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) | Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) |
| Main Machine Weight | ≈ 2000kg | Main Machine Weight | ≈ 2000kg |
| Cooling Water Flow | 6m³/h | Cooling Water Flow | 6m³/h |
| Cold Furnace Limit Vacuum | 5 × 10⁻⁴ Pa | Cold Furnace Limit Vacuum | 5 × 10⁻⁴ Pa |
| Furnace Atmosphere | Argon (5N), Nitrogen (5N) | Furnace Atmosphere | Argon (5N), Nitrogen (5N) |
| Raw Material | Silicon Carbide Particles | Raw Material | Silicon Carbide Particles |
| Product Crystal Type | 4H | Product Crystal Type | 4H |
| Product Crystal Thickness | 18mm ~ 30mm | Product Crystal Thickness | ≥ 15mm |
| Effective Diameter of Crystal | ≥ 150mm | Effective Diameter of Crystal | ≥ 200mm |
Our servise
Tailored One-Stop Solutions
We provide customized Silicon Carbide (SiC) furnace solutions, including PVT, Lely, and TSSG/LPE technologies, tailored to meet your specific needs. From design to optimization, we ensure our systems align with your production goals.
Client Training
We offer comprehensive training to ensure your team fully understands how to operate and maintain our furnaces. Our training covers everything from basic operations to advanced troubleshooting.
On-Site Installation and Commissioning
Our team personally installs and commissions the SiC furnaces at your location. We ensure smooth setup and conduct a thorough verification process to guarantee the system is fully operational.
After-Sales Support
We provide responsive after-sales service. Our team is ready to assist with on-site repairs and troubleshooting to minimize downtime and keep your equipment running smoothly.
We are dedicated to offering high-quality furnaces and continuous support to ensure your success in SiC crystal growth.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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