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Shenzhen Canyi Technology Co., Ltd.

  • China,Shenzhen ,Guangdong
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China P Mosfet Horizontal Output High Power Transistor SOT323 3D 3H 3M RoHS Approval
China P Mosfet Horizontal Output High Power Transistor SOT323 3D 3H 3M RoHS Approval

  1. China P Mosfet Horizontal Output High Power Transistor SOT323 3D 3H 3M RoHS Approval
  2. China P Mosfet Horizontal Output High Power Transistor SOT323 3D 3H 3M RoHS Approval

P Mosfet Horizontal Output High Power Transistor SOT323 3D 3H 3M RoHS Approval

  1. MOQ: 1000PCS
  2. Price: Negotiated
  3. Get Latest Price
Payment Terms Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability 15,000,000PCS Per Day
Delivery Time 3-5 days
Packaging Details Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Type plastic Transistor
Package SOT-323
TJ, Tstg -65 to 150℃
Shipping by DHL\UPS\Fedex\EMS\HK Post
Lead time 2-3days
Application For VCD, DVD, calculator, etc.
Brand Name CANYI
Model Number BC856W BC857W BC858W
Certification RoHS
Place of Origin Guangdong, China

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  1. Product Details
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Product Specification

Payment Terms Telegraphic Transfer in Advance (Advance TT, T/T) Supply Ability 15,000,000PCS Per Day
Delivery Time 3-5 days Packaging Details Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Type plastic Transistor Package SOT-323
TJ, Tstg -65 to 150℃ Shipping by DHL\UPS\Fedex\EMS\HK Post
Lead time 2-3days Application For VCD, DVD, calculator, etc.
Brand Name CANYI Model Number BC856W BC857W BC858W
Certification RoHS Place of Origin Guangdong, China
High Light mosfet power transistorhigh power transistor

p mosfet horizontal output transistor SOT323 3D 3H 3M field effect transistor
 

TYPE NUMBERMARKING CODE:
BC856W: 3D*
BC856AW: 3A*
BC856BW: 3B*
BC857W: 3H*
BC857AW: 3E*
BC857BW: 3F*
BC857CW: 3G*
BC858W: 3M*
Field effect transistor features:

  1. Low current(max.100mA)
  2. Low voltage(max.65V)
  3. base-emitter voltage:-600~-700mV
  4. collector capacitance:3pF; emitter capacitance=12pF
  5. hFE=125-800
  6. noise figure=10dB
Power field effect transistor description:
  1. PNP transistor in a SOT-323 plastic package.
  2. NPN complements: BC846W, BC847W and BC848W.

Horizontal output transistor applications:

  1. General purpose switching and amplification.
  2. It can convert AC power into pulse DC power in a single direction, equivalent to a rectifier diode
  3. After the diode is turned on, the forward voltage drop remains basically unchanged, which can limit the signal amplitude to a certain
  4. Plays a role in the inductive load of switching power supply and inductive load such as relay.

     

 

CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

 

PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT
collector-base voltage VCBO open emitter      
BC856W   −80 V
BC857W   −50 V
BC858W   −30 V
collector-emitter voltage VCEO open base      
BC856W   −65 V
BC857W   −45 V
BC858W   −30 V
emitter-base voltage VEBO open collector −5 V
collector current (DC) IC   −100 mA
peak collector current ICM   −200 mA
peak base current IBM   −200 mA
total power dissipation Ptot Tamb ≤ 25 °C; note 1 200 mW
storage temperature Tstg   −65 +150 °C
junction temperature Tj   150 °C
operating ambient temperature Tamb   −65 +150 °C

Note

  1. Refer to SOT323 standard mounting conditions.

CHARACTERISTICS Tamb = 25 °C; unless otherwise specified.

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT
collector-base cut-off current ICBO VCB = −30 V; IE = 0 −1 −15 nA

VCB = −30 V; IE = 0;

Tj = 150 °C

−4 μA
       
emitter-base cut-off current IEBO VEB = −5 V; IC = 0 −100 nA
DC current gain hFE IC = −2 mA; VCE = −5 V        
BC856W 125 475  
BC857W; BC858W 125 800  
BC856AW; BC857AW 125 250  
BC856BW; BC857BW 220 475  
BC857CW 420 800  
collector-emitter saturation voltage VCEsat IC = −10 mA; IB = −0.5 mA −75 −300 mV
IC = −100 mA; IB = −5 mA;note 1 −250 −600 mV
base-emitter saturation voltage VBEsat IC = −10 mA; IB = −0.5 mA −700 mV
IC = −100 mA; IB = −5 mA;note 1 −850 mV
base-emitter voltage VBE IC = −2 mA; VCE = −5 V −600 −650 −750 mV
IC = −10 mA; VCE = −5 V −820 mV
collector capacitance Cc VCB = −10 V; IE = Ie = 0;f = 1 MHz 3 pF
emitter capacitance Ce VEB = −0.5 V; IC = Ic = 0;f = 1 MHz 12 pF
transition frequency fT VCE = −5 V; IC = −10 mA;f = 100 MHz 100 MHz
noise figure F IC = −200 μA; VCE = −5 V;RS = 2 kΩ; f = 1 kHz;B = 200 Hz 10

dB

 

Note:

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

 

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.


Contact:Wendy Yan
Email:wendy@doublelight.com.cn
Wechat:+86 13423609933
Skype:wendy@doublelight.com.cn
Whatsapp:+86 13423609933

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Agent

  • Year Established:

    2000

  • Total Annual:

    500000-1000000

  • Employee Number:

    100~120

  • Ecer Certification:

    Active Member

Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe... Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe...

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  • Shenzhen Canyi Technology Co., Ltd.
  • Room 4005, Floor 40th, Saige Square, Huaqiang North Road NO.1002, Futian District, Shenzhen, Guangdong, China
  • https://schottkysignaldiode.ecer.com/

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