China factories

China factory - Shenzhen Canyi Technology Co., Ltd.

Shenzhen Canyi Technology Co., Ltd.

  • China,Shenzhen ,Guangdong
  • Active Member

Leave a Message

we will call you back quickly!

Submit Requirement
China High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel
China High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel

  1. China High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel
  2. China High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel

High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel

  1. MOQ: Negotiable
  2. Price: Negotiated
  3. Get Latest Price
Payment Terms Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability 15,000,000PCS Per Day
Delivery Time 3-5 days
Packaging Details Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Type N-Channel Power MOSFET
Package TO-220
Drain-Source Voltage 800v
Continuous Drain Current 3A
Package type Throught Hole
samples free
Brand Name CANYI
Model Number 3N80
Certification RoHS
Place of Origin Guangdong, China

View Detail Information

Contact Now Ask for best deal
Get Latest Price Request a quote
  1. Product Details
  2. Company Details

Product Specification

Payment Terms Telegraphic Transfer in Advance (Advance TT, T/T) Supply Ability 15,000,000PCS Per Day
Delivery Time 3-5 days Packaging Details Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Type N-Channel Power MOSFET Package TO-220
Drain-Source Voltage 800v Continuous Drain Current 3A
Package type Throught Hole samples free
Brand Name CANYI Model Number 3N80
Certification RoHS Place of Origin Guangdong, China
High Light high power transistorp channel transistor

High precision 3N80 3A 800V Field Effect Transistor/ Power Mosfet N-Channel TO-220

 

20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET


High power transistor features:

  • Excellent package for good heat dissipation
  • Ultra low gate charge
  • Low reverse transfer capacitance
  • Fast switching capability
  • Avalanche energy specified

 

General description of insulated gate bipolar transistor

The 3N80 provide excellent RDS(ON)low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.It used in power switching application.

 

 

 

 

Maximum ratings (Ta=25℃ unless otherwise noted)

 

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 800 V
Gate-Source Voltage VGS ±30
Continuous Drain Current ID 3 A

 

Pulsed Drain Current

IDM 10
Single Pulsed Avalanche Energy (note1)

EAS

 

170

mJ

 

Thermal Resistance from Junction to Ambient

RθJA

 

62.5

℃/W

 

Junction Temperature TJ 150

 

Storage Temperature Range TSTG -55~+150

Maximum lead temperature for soldering purposes ,

1/8”from case for 5 seconds

TL

 

260

 

 
Electrical characteristics (Ta=25℃ unless otherwise noted)

 

Parameter Symbol Test Condition Unit
Off Characteristics
Drain-Source Breakdown Voltage V(BR) DSS VGS = 0V, ID = -250uA V
Zero Gate Voltage Drain Current IDSS VDS = 800V, VGS = 0V uA
Gate Body Leakage IGSS VGS=±30v,VDS= 0V nA
On characteristics (note 2)
Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 1.5A mΩ
Forward Transconductance 1) gfs VDS=1 5V,ID= 1.5A S
Gate Threshold Voltage VGS(th) VDS = VGS ,ID = 250uA v
Switching Characteristics (note 2,3)
Turn-On Delay Time td(on)

VDD = 400V, VDS=10V

RG=4.7Ω,RG = 3A

ns
Turn-On Rise Time tr
Turn-Off Delay Time td(off)
Turn-Off Fall Time tf
Total Gate Charge Qg

VDS =640V,VGS =10V,ID =3A

 

nC
Gate-Source Charge Qgs nC
Gate-Drain Charge Qgd nC
Dynamic Characteristics (note 3)
Input Capacitance Ciss

 

VDS = 25V, VGS = 0V

f = 1 MHz

 

pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Drain-source diode characteristics and maximum ratings
Drain-source diode forward voltage VSD VGS = 0V, IS =3A V

Continuous drain-source diode forward

current

 

IS

 

  A

Pulsed drain-source diode forward current

 

ISM

 

A

 

Notes :
1. IL=3A, VDD=50V, RG=25Ω,Starting TJ=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. Guaranteed by design, not subject to production </

 

Choose Canyi to get more benefit:

  • Supplying to Changdian, Xinghai, Tuofeng, Leshan, Roma and Anshi
  • Competitive price and save your time
  • Over 10 years work experience technical service team
  • Mix order accepted and free sample

Our fast delivery time can be in just one to two weeks for urgent demands. Providing customers with flexible, safe and efficient logistics services.For a electronic information base component supplier, contact us today.

 

 

Contact:Roundy
Tel: 86-755-82853859

Fax: 86-755-83229774

Email:Roundy@doublelight.com.cn

Wechat:15216951191

Facebook:Doublelight
Skype:Roundy@doublelight.com.cn
Whatsapp:+86 15216951191

 


 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Agent

  • Year Established:

    2000

  • Total Annual:

    500000-1000000

  • Employee Number:

    100~120

  • Ecer Certification:

    Active Member

Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe... Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe...

+ Read More

Get in touch with us

  • Reach Us
  • Shenzhen Canyi Technology Co., Ltd.
  • Room 4005, Floor 40th, Saige Square, Huaqiang North Road NO.1002, Futian District, Shenzhen, Guangdong, China
  • https://schottkysignaldiode.ecer.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement