Shenzhen Canyi Technology Co., Ltd.
| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) |
| Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 3-5 days |
| Packaging Details | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
| Type | NCE N channel MOSFET |
| Package Type | Surface Mount |
| Package | TO-252 |
| VDS | 30V |
| Drain Current-Continuous | 100A |
| Maximum Power Dissipation | 110W |
| Brand Name | NCE |
| Model Number | NCE30H10K |
| Certification | RoHS |
| Place of Origin | Guangdong, China |
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Product Specification
| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) | Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 3-5 days | Packaging Details | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
| Type | NCE N channel MOSFET | Package Type | Surface Mount |
| Package | TO-252 | VDS | 30V |
| Drain Current-Continuous | 100A | Maximum Power Dissipation | 110W |
| Brand Name | NCE | Model Number | NCE30H10K |
| Certification | RoHS | Place of Origin | Guangdong, China |
| High Light | NCE N Channel MOSFET ，NCE30H10K Surface Mount MOSFET ，TO-252 Surface Mount MOSFET | ||
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor
N channel transistor features
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 800 | V |
| Gate-Source Voltage | VGS | ±30 | |
| Continuous Drain Current | ID | 100 | A |
| IDM | 400 | |
Maximum Power Dissipation | PD | 110 | W |
Single pulse avalanche energy ( | EAS | 350 | mJ |
Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | ℃ |
Electrical Characteristics (TA=25°C, unless otherwise noted)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR) DSS | VGS = 0V, ID = -250uA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = -0V | - | - | 1 | uA |
| Gate Body Leakage | IGSS | VGS=±12v,VDS= 0V | - | - | ±100 | nA |
| On characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS ,ID = 250uA | 1 | 1.6 | 3 | v |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | - | 4.0 | 5.5 | mΩ |
| Forward Transconductance | gfs | VDS= 10V,ID= 20A | 50 | - | - | S |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 15V, ID=60A | - | 11 | - | ns |
| Turn-On Rise Time | tr | - | 160 | - | ||
| Turn-Off Delay Time | td(off) | - | 25 | - | ||
| Turn-Off Fall Time | tf | - | 60 | - | ||
Total Gate Charge | Qg | VDS=15V,ID=30A, | 70 | nC | ||
Gate-Source Charge | Qgs | 8.8 | ||||
Gate-Drain Charge | Qgd | 16.3 | ||||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | | 3400 | pF | ||
| Output Capacitance | Coss | 356 | ||||
| Reverse Transfer Capacitance | Crss | 308 | ||||
| Drain-source diode characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | - | - | 1.2 | V |
| Diode Forward Current | IS | - | - | - | 100 | A |
| Reverse Recovery Time | trr | Tj=25℃,Isd=60A, | - | 56 | - | ns |
| Reverse Recovery Charge | Qrr | - | 110 | - | nC | |
Company Details
Business Type:
Distributor/Wholesaler,Agent
Year Established:
2000
Total Annual:
500000-1000000
Employee Number:
100~120
Ecer Certification：
Active Member
Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe... Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe...
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