Shenzhen Canyi Technology Co., Ltd.
| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) |
| Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 3-5 days |
| Packaging Details | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
| Type | plastic Transistor |
| Package | SOP-8 |
| TJ, Tstg | -55 to 175℃ |
| Shipping by | DHL\UPS\Fedex\EMS\HK Post |
| Application | For VCD, DVD, calculator, etc. |
| VDS | 30V |
| Brand Name | CANYI |
| Model Number | AP85N03NF |
| Certification | RoHS |
| Place of Origin | Guangdong, China |
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Product Specification
| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) | Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 3-5 days | Packaging Details | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
| Type | plastic Transistor | Package | SOP-8 |
| TJ, Tstg | -55 to 175℃ | Shipping by | DHL\UPS\Fedex\EMS\HK Post |
| Application | For VCD, DVD, calculator, etc. | VDS | 30V |
| Brand Name | CANYI | Model Number | AP85N03NF |
| Certification | RoHS | Place of Origin | Guangdong, China |
| High Light | mosfet power transistor ，high power transistor | ||
AP85N03NF Power field effect Transistor MOSFET SMD N-Channel with Load switch
Description
The AP85N03NF uses advanced trench technology to provide excellent R DS(ON)
low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features
V DS = 30V I D =85 A R DS(ON) < 4mΩ @ V GS =10V
Application
Battery protection
Load switch
Uninterruptible power supply
DFN5*6-8L
N-Channel MOSFET
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1,6 | 85 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS @ 10V1,6 | 68 | A |
| IDM | Pulsed Drain Current2 | 216 | A |
| EAS | Single Pulse Avalanche Energy3 | 144.7 | mJ |
| IAS | Avalanche Current | 53.8 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 69 | W |
| PD@TA=25℃ | Total Power Dissipation4 | 5 | W |
| TSTG | Storage Temperature Range | -55 to 175 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 175 | ℃ |
| RθJA | Thermal Resistance Junction-Ambient 1 | 62 | ℃/W |
| RθJA | Thermal Resistance Junction-Ambient 1 (t ≤10s) | 25 | ℃/W |
| RθJC | Thermal Resistance Junction-Case1 | 1.8 | ℃/W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.0213 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | --- | 2.2 | 4 | mΩ |
| VGS=4.5V , ID=15A | --- | 4.8 | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -5.73 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | |
| nA | ||||||
| gfs | Forward Transconductance | VDS=5V , ID=30A | --- | 26.5 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.4 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=15A | --- | 98 | --- | nC |
| Qgs | Gate-Source Charge | --- | 11 | --- | ||
| Qgd | Gate-Drain Charge | --- | 21 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=15A |
--- | 17 | --- | ns |
| ns | ||||||
| Tr | Rise Time | --- | 41 | --- | ns | |
| ns | ||||||
| Td(off) | Turn-Off Delay Time | --- | 55 | --- | ||
| ns | ||||||
| ns | ||||||
| Tf | Fall Time | --- | 66 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 5471 | --- | pF |
| pF | ||||||
| Coss | Output Capacitance | --- | 1628 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 1026 | --- | pF | |
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 130 | A |
| A | ||||||
| ISM | Pulsed Source Current2,5 | --- | --- | 520 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =53.8A
4.The power dissipation is limited by 175℃ junction temperature
5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
6.Package limitation current is 85A.
For more information please refer to the attachment, or contact us:
Company Details
Business Type:
Distributor/Wholesaler,Agent
Year Established:
2000
Total Annual:
500000-1000000
Employee Number:
100~120
Ecer Certification：
Active Member
Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe... Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe...
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