Shenzhen Canyi Technology Co., Ltd.
| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) |
| Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 3-7 days |
| Packaging Details | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
| Type | plastic Transistor |
| Application | aload switch or in PWM |
| Forward Transconductance | 20S |
| Drain-Source Breakdown Voltage | -33V |
| Single pulse avalanche energy | 231mJ |
| Operating Junction and Storage Temperature Range | -55 To 150 ℃ |
| Brand Name | CANYI |
| Model Number | AP50P03NF |
| Certification | RoHS |
| Place of Origin | shenzhen, China |
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Product Specification
| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) | Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 3-7 days | Packaging Details | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
| Type | plastic Transistor | Application | aload switch or in PWM |
| Forward Transconductance | 20S | Drain-Source Breakdown Voltage | -33V |
| Single pulse avalanche energy | 231mJ | Operating Junction and Storage Temperature Range | -55 To 150 ℃ |
| Brand Name | CANYI | Model Number | AP50P03NF |
| Certification | RoHS | Place of Origin | shenzhen, China |
| High Light | mosfet power transistor ，high power transistor | ||
AP50P03NF P-Channel Advanced Power MOSFET field effect high voltage transistor
AP50P03NF.pdf
Description
The AP50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications.
General Features
V DS = -30V,I D = -50A
R DS(ON) < 18mΩ @ V GS =-4.5V
R DS(ON) < 13mΩ @ V GS =-10V
High Power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
Power management
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Drain Current-Continuous (T C =25℃) | I D | -50 | A |
| Drain Current-Continuous (T C =100℃) | -24 | ||
| Drain Current-Pulsed (Note 1) |
IDM | -80 | A |
| Maximum Power Dissipation (T C =25℃) | P D | 3 | W |
| Maximum Power Dissipation (T C =100℃) | 1.3 | ||
| Single pulse avalanche energy (Note 5) |
EAS | 231 | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ |
| Thermal Resistance,Junction-to-Ambient (Note 2) |
RθJA | 41.67 | ℃ /W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BV DSS | V GS =0V I D =-250μA | -30 | -33 | - | V |
| Zero Gate Voltage Drain Current | IDSS | V DS =-30V,V GS =0V | - | - | -1 | μA |
| Gate-Body Leakage Current | IGSS | V GS =±20V,V DS =0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | V DS =V GS ,I D =-250μA | -1 | -1.5 | -3 | V |
| Drain-Source On-State Resistance | RDS(ON) | V GS =-10V, I D =-10A | - | 11.5 | 15 | mΩ |
| V GS =-4.5V, I D =-7A | - | 18 | 25 | mΩ | ||
| Forward Transconductance | gFS | V DS =-10V,I D =-10A | - | 20 | - | S |
| Input Capacitance | C lss | V DS =-15V,V GS =0V,F=1.0MHz | - | 1750 | - | PF |
| Output Capacitance | Coss | - | 215 | - | PF | |
| Reverse Transfer Capacitance | C rss | - | 180 | - | PF | |
| Turn-on Delay Time | td(on) |
V DD =-15V, ID=-10A,V GS =-10V, R GEN =1Ω |
- | 9 | - | nS |
| Turn-on Rise Time | t r | - | 8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 28 | - | nS | |
| Turn-Off Fall Time | t f | - | 10 | - | nS | |
| Total Gate Charge | Q g | V DS =-15V,I D =-10A,V GS =-10V | - | 24 | - | nC |
| Gate-Source Charge | Q gs | - | 3.5 | - | nC | |
| Gate-Drain Charge | Q gd | - | 6 | - | nC | |
| Diode Forward Current (Note 2) |
I S | - | - | -12 | A | |
| Diode Forward Voltage (Note 3) |
VSD | V GS =0V,I S =-12A | - | - | -1.2 | V |
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. E AS condition: Tj=25℃,V DD =-15V,V G =10V,L=0.5mH,Rg=25Ω, I AS =-34A
For more information please refer to the attachment, or contact us:
Contact: Roundy
Tel: 86-755-82853859
Fax: 86-755-83229774
Email:Roundy@doublelight.com.cn
Wechat:15216951191
Skype:Roundy@doublelight.com.cn
Whatsapp:+86 15216951191
Company Details
Business Type:
Distributor/Wholesaler,Agent
Year Established:
2000
Total Annual:
500000-1000000
Employee Number:
100~120
Ecer Certification：
Active Member
Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe... Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe...
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