Shenzhen Canyi Technology Co., Ltd.
| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) |
| Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 3-7 days |
| Packaging Details | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
| Type | plastic Transistor |
| Application | Battery protection or in other Switching |
| Reverse Transfer Capacitance | 131pF |
| Forward Transconductance | 9.8S |
| Avalanche Current | 34A |
| Storage Temperature Range | -55 To 150 ℃ |
| Brand Name | CANYI |
| Model Number | AP60N03DF |
| Certification | RoHS |
| Place of Origin | shenzhen, China |
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Product Specification
| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) | Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 3-7 days | Packaging Details | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
| Type | plastic Transistor | Application | Battery protection or in other Switching |
| Reverse Transfer Capacitance | 131pF | Forward Transconductance | 9.8S |
| Avalanche Current | 34A | Storage Temperature Range | -55 To 150 ℃ |
| Brand Name | CANYI | Model Number | AP60N03DF |
| Certification | RoHS | Place of Origin | shenzhen, China |
| High Light | mosfet power transistor ，high power transistor | ||
AP60N03DF N-Channel Advanced Power MOSFET power field effect transistor
AP60N03DF.pdf
Description
The AP60N03DF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
V DS = 30V I D =60 A
R DS(ON) < 8.5mΩ @ V GS =10V
Application
Battery protection
Load switch
Uninterruptible power supply
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 30 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current, V GS @ 10V 1 | I D @T C =25 ℃ | 60 | A |
| Continuous Drain Current, V GS @ 10V 1 | I D @T C =100 ℃ | 29 | |
| Continuous Drain Current, V GS @ 10V 1 | I D @T A =25℃ | 11 | A |
| Continuous Drain Current, V GS @ 10V 1 | I D @T A =70℃ | 9 | A |
| Pulsed Drain Current 2 | I DM | 92 | A |
| Single Pulse Avalanche Energy 3 | EAS | 57.8 | mJ |
| Avalanche Current | I AS | 34 | A |
| Total Power Dissipation 4 | P D @T C =25℃ | 29 | W |
| Total Power Dissipation 4 | P D @T A =25 ℃ | 1.67 | W |
| Storage Temperature Range | T STG | -55 to 150 | ℃ |
| Operating Junction Temperature Range | T J | -55 to 150 | ℃ |
| Thermal Resistance Junction-ambient 1 |
R θJA | 75 | ℃ /W |
| Thermal Resistance Junction-Case 1 | R θJC | 4.32 | ℃ /W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BV DSS | V GS =0V I D =250μA | 30 | - | - | V |
| BVDSS Temperature Coefficient | △BV DSS /△T J | Reference to 25℃ ,I D =1mA | - | 0.027 | - | V/℃ |
| Static Drain-Source On-Resistance 2 | R DS(ON) | V GS =10V , I D =12A | - | 7 | 8.5 | mΩ |
| V GS =4.5V , I D =10A | 10 | 1.3 | ||||
| Gate Threshold Voltage | VGS(th) | V GS =V DS , I D =250uA | 1.0 | - | 2.5 | V |
| V GS(th) Temperature Coefficient | △V GS(th | - | -5.8 | - | mV/℃ | |
| Drain-Source Leakage Current | I DSS |
V DS =24V , V GS =0V , T J =25℃ |
- | - | 1 | uA |
|
V DS =24V , V GS =0V , T J =55℃ |
- | - | 5 | |||
| Gate-Source Leakage Current | I GSS | V GS =±20V , V DS =0V | - | - | ± 100 | nA |
| Forward Transconductance | gFS | V DS =5V , I D =15A | - | 9.8 | - | S |
| Gate Resistance | R g | V DS =0V , V GS =0V ,f=1MHz | - | 1.7 | - | |
| Total Gate Charge (4.5V) | Q g |
V DS =20V , V GS =4.5V , I D =12A |
- | 12.8 | - | nC |
| Gate-Source Charge | Q gs | - | 3.3 | - | ||
| Gate-Drain Charge | Q gd | - | 6.5 | - | ||
| Turn-on Delay Time | td(on) |
V DD =12V , V GS =10V , R G =3.3 I D =5A |
- | 4.5 | - | nS |
| Rise Time | t r | - | 10.8 | - | ||
| Turn-Off Delay Time | td(off) | - | 25.5 | - | ||
| Fall Time | t f | - | 9.6 | - | ||
| Input Capacitance | C iss | V DS =15V , V GS =0V ,f=1MHz | - | 1317 | - | pF |
| Output Capacitance | C oss | - | 163 | - | ||
| Reverse Transfer Capacitance | C rss | - | 131 | - | ||
| Continuous Source Current 1,6 | I S | V G =V D =0V , Force Current | - | - | 46 | A |
| Pulsed Source Current 2,6 | I SM | - | - | 92 | A | |
| Diode Forward Voltage 2 | VSD | V GS =0V , I S =1A ,T J =25℃ | - | - | 1 | V |
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3 .The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =34A
4.The power dissipation is limited by 150℃ junction temperature
5 .The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
Company Details
Business Type:
Distributor/Wholesaler,Agent
Year Established:
2000
Total Annual:
500000-1000000
Employee Number:
100~120
Ecer Certification：
Active Member
Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe... Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe...
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