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Shenzhen Canyi Technology Co., Ltd.

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China N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power
China N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power

  1. China N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power

N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power

  1. MOQ: 1000PCS
  2. Price: US$ 0.1-0.19 per unit (Pieces)
  3. Get Latest Price
Payment Terms Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability 1000,000,000PCS Per Day
Delivery Time 3-5 days
Packaging Details Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Name 10N60 MOSFET
Package Type TO-220,TO-220F
Type Field-Effect Transistor
VDSS 600V
Lead time 3-5 days
Brand Name Canyi
Model Number 10N60
Certification RoHS
Place of Origin Guangdong, China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms Telegraphic Transfer in Advance (Advance TT, T/T) Supply Ability 1000,000,000PCS Per Day
Delivery Time 3-5 days Packaging Details Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Name 10N60 MOSFET Package Type TO-220,TO-220F
Type Field-Effect Transistor VDSS 600V
Lead time 3-5 days Brand Name Canyi
Model Number 10N60 Certification RoHS
Place of Origin Guangdong, China
High Light mosfet power transistorhigh power transistor

10N60 600V n channel mosfet field effect transistors for switched mode power supplies

 

Datasheet:CY-10N60F.pdf

 

Field effect transistor features:

  • Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V
  • Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC)
  • Fast switching
  • 100% avalanche tested to make sure quality before ship
  • This 10N60 improved rate of change of voltage over time
Mosfet General Description:
The10N60H N Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge to pology
.
 

Absolute Maximum Ratings (Tc=25°C)
 

Symbol Parameters FQPF10N60C Unit
VDSS

Drain-Source Voltage

600 V
VGS

Gate-Source Voltage-Continuous

±30 V
ID

Drain Current-Continuous

9.5* A
IDM

Drain Current-Single Plused

38* A
PD

Power Dissipation

50 W
Tj

Max.Operating junction temperature

-55~150

 
Electrical characteristics (Tc=25°C unless otherwise noted)
 

Symbol Parameters Min Typ Max Units Conditions
Static Characteristics
BVDSS

Drain-Source Breakdown
VoltageCurrent (Note 1)

600 -- -- V VGS =0 V, ID =250 µA
VGS(th)

Gate Threshold Voltage

2.0 -- 4.0 V VDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

-- 0.6 0.73 Ω

VGS=10V,ID=4.75A

IGSS

Gate-Body Leakage Current

-- -- ±100 nA VGS=±30V,VDS=0
IDSS

Zero Gate Voltage Drain Current

-- -- 1 μA VDS=600V,VGS=0
gfs

Forward Transconductance

-- 8.0 -- S VDS=40V,ID=4.75A (Note 4)
Switching Characteristics
Td(on)

Turn-On Delay Time

-- 23 55 ns

VDS=300V,ID=9.5A,
RG=25Ω(Note 4)

Tr

Rise Time

-- 69 150 ns
Td(off)

Turn-Off Delay Time

-- 144 300 ns
Tf

Fall Time

-- 77 165 ns
Qg

Total Gate Charge

-- 44 57 nC

VDS=480V,VGS=10V,
ID=9.5A(Note 2)
 

Qgs

Gate-Source Charge

-- 6.7 -- nC
Qgd

Gate-Drain Charge

--

18.5

-- nC
Dynamic Characteristics
Ciss

Input Capacitance

-- 1570 2040 pF

VDS=25V,VGS=0,
f=1.0MHz
 

Coss

Output Capacitance

-- 166 215 pF
Crss

Reverse Transfer Capacitance

-- 18 24 pF
IS

Continuous Drain-Source Diode
Forward Current(Note 2)

-- -- 9.5 A  
VSD

Diode Forward On-Voltage

-- -- 1.4 V IS=9.5A,VGS=0V

 
Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.

 

We are professional Electronic Components at competitive price,located in Shenzhen City,China.
Should you have any inquires or comments,we would be glad to talk in details through skype/email/Wechat/WhatsApp or any way you like.

 

Contact:Wendy Yan
Email:wendy@doublelight.com.cn
Wechat:+86 13423609933
Skype:wendy@doublelight.com.cn
Whatsapp:+86 13423609933

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Agent

  • Year Established:

    2000

  • Total Annual:

    500000-1000000

  • Employee Number:

    100~120

  • Ecer Certification:

    Active Member

Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe... Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe...

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Get in touch with us

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  • Shenzhen Canyi Technology Co., Ltd.
  • Room 4005, Floor 40th, Saige Square, Huaqiang North Road NO.1002, Futian District, Shenzhen, Guangdong, China
  • https://schottkysignaldiode.ecer.com/

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