| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) |
| Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 1 - 2 Weeks |
| Packaging Details | Boxed |
| Name | N Channel Field Effect Transistor |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage-Continuous | ±20V |
| Drain Current-Continuous(Note 2) | 55A |
| Drain Current-Single Plused(Note 1) | 200A |
| Power Dissipation (Note 2) | 130W |
| Brand Name | JC |
| Model Number | OSP55N06- |
| Certification | RoHS |
| Place of Origin | Jiangxi, China |
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Product Specification
| Payment Terms | Telegraphic Transfer in Advance (Advance TT, T/T) | Supply Ability | 15,000,000PCS Per Day |
| Delivery Time | 1 - 2 Weeks | Packaging Details | Boxed |
| Name | N Channel Field Effect Transistor | Drain-Source Voltage | 60V |
| Gate-Source Voltage-Continuous | ±20V | Drain Current-Continuous(Note 2) | 55A |
| Drain Current-Single Plused(Note 1) | 200A | Power Dissipation (Note 2) | 130W |
| Brand Name | JC | Model Number | OSP55N06- |
| Certification | RoHS | Place of Origin | Jiangxi, China |
| High Light | mosfet power transistor ,high power transistor | ||
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast
N Channel Field Effect Transistor Features
Absolute Maximum Ratings (Tc=25°C)
| Symbol | Parameters | Ratings | Unit |
| VDSS | Drain-Source Voltage | 60 | V |
| VGS | Gate-Source Voltage-Continuous | ±20 | V |
| ID | Drain Current-Continuous(Note 2) | 55 | A |
| IDM | Drain Current-Single Plused(Note 1) | 200 | A |
| PD | Power Dissipation (Note 2) | 130 | W |
| Tj | Max.Operating junction temperature | 150 | ℃ |
Electrical characteristics (Tc=25°C unless otherwise noted)
| Symbol | Parameters | Min | Typ | Max | Units | Conditions | ||
| Static Characteristics | ||||||||
| BVDSS | Drain-Source Breakdown | 60 | -- | -- | V | ID=250µA,VGS=0V,TJ=25°C | ||
| VGS(th) | Gate Threshold Voltage | 2.0 | -- | 4.0 | V | VDS=VGS,ID=250μA | ||
| RDS(on) | Drain-Source On-Resistance | -- | 18 | 22 | mΩ | VGS=10V,ID=25A | ||
| IGSS | Gate-Body Leakage Current | -- | -- | ±100 | nA | VGS=±20V,VDS=0 | ||
| IDSS | Zero Gate Voltage Drain Current | -- | -- | 1 | μA | VDS=60V,VGS=0 | ||
| gfs | Forward Transconductance | 15 | -- | -- | S | VDS=30V,ID=25A | ||
| Switching Characteristics | ||||||||
| Td(on) | Turn-On Delay Time | -- | 60 | -- | ns | VDS=30V,ID=25A, | ||
| Tr | Rise Time | -- | 185 | -- | ns | |||
| Td(off) | Turn-Off Delay Time | -- | 75 | -- | ns | |||
| Tf | Fall Time | -- | 60 | -- | ns | |||
| Qg | Total Gate Charge | -- | 39 | -- | nC | VDS=48V,VGS=10V, | ||
| Qgs | Gate-Source Charge | -- | 9.3 | -- | nC | |||
| Qgd | Gate-Drain Charge | -- | 13 | -- | nC | |||
| Dynamic Characteristics | ||||||||
| Ciss | Input Capacitance | -- | 880 | -- | pF | VDS=25V,VGS=0, | ||
| Coss | Output Capacitance | -- | 430 | -- | pF | |||
| Crss | Reverse Transfer Capacitance | -- | 110 | -- | pF | |||
| IS | Continuous Drain-Source Diode | -- | -- | 55 | A | |||
| VSD | Diode Forward On-Voltage | -- | -- | 1.4 | V | IS=20A,VGS=0 | ||
| Rth(j-c) | Thermal Resistance, Junction to Case | -- | -- | 1.15 | ℃/W | |||
Our Company
Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
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Company Details
Business Type:
Distributor/Wholesaler,Agent
Year Established:
2000
Total Annual:
500000-1000000
Employee Number:
100~120
Ecer Certification:
Active Member
Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe... Shenzhen Canyi Technology Co., Ltd. is committed to the promotion and distribution of well-known electronic components, and its products cover network communication, industrial control, automotive electronics, security monitoring and consumer electronics. In 2013, Canyi Technology officially represe...
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