80v mos capacitor ultra linear cv

{"cid":"91225864","title":"Durable Zero Dielectric Memory 1000pF 80V MOS Capacitors Ultra-Linear CV Characteristics Paraelectric SiO2","imgUrl":"https:\/\/img.chinax.com\/nimg\/bd\/d3\/92ea91838d95c0ea0f86375fd43f-200x200-1.jpg","attrs":{"Brand Name":"Hoan","Model Number":"HACC102S80V500","Minimum Order Quantity":"10 Pieces","Delivery Time":"1-2 weeks for standard stock, 3-4 weeks for custom production","Rated Voltage":"80V DC","Substrate Resistivity":">1000 Ohm\u00b7cm, Float-zone Silicon","Mounting Type":"Wire Bondable \/ Conductive Epoxy or AuSn Eutectic Die Attach","Aging Rate":"0% per decade-hour (no ferroelectric aging)","ESR @ 1GHz":"<0.15 Ohm","Substrate":"Float-Zone Si, >1000 Ohm\u00b7cm","Dielectric Absorption":"<0.1% @ 1kHz","Leakage @ 25\u00b0C \/ @ 125\u00b0C":"<10nA \/ <100nA at 80V DC","Moisture Sensitivity":"MSL 1 (Unlimited floor life per J-STD-020)","Q Factor @ 1MHz \/ @ 1GHz":">1500 \/ >150","Intrinsic Chip ESL":"<0.08nH","TCC":"+35 ppm\/\u00b0C (-55\u00b0C to +125\u00b0C)","Dielectric":"Thermal SiO2, 300nm (paraelectric, zero memory)","Capacitance":"1000pF \u00b110% (\u00b15% available)","Chip Dimensions":"0.75 \u00d7 0.75 \u00d7 0.15 mm","Certification":"ISO 9001:2015, RoHS, REACH","Backside Metallization":"TiW-Pt-Au, \u22651.0\u00b5m Au (Pt barrier)","Design Architecture":"Double-Sided Bordered (Margin)","Operating Temperature":"-55\u00b0C to +125\u00b0C","DC Bias Capacitance Droop":"Negligible (<0.1% at rated 80V DC)","Insulation Resistance":"\u226510\u2074 M\u03a9 @ Rated Voltage DC, 25\u00b0C","Place of Origin":"Shaanxi, China","SRF (0.5mm bond wire)":">300MHz","Dissipation Factor":"\u22640.15% @ 1kHz, 1.0 Vrms","Payment Terms":"L\/C,D\/A,D\/P,T\/T,","Top Metallization":"TiW-Au, \u22652.5\u00b5m Au","Dielectric Memory":"Zero (paraelectric SiO2, no ferroelectric domains)","C-V Linearity":"Ultra-linear, <10 ppm\/V DC bias coefficient","Wire Bond Pull Strength":">6 gf for 25\u00b5m Au wire (MIL-STD-883 Method 2011.7)"}}