8inch gan on si epitaxy si substrate

{"cid":"91191224","title":"8inch GaN-on-Si Epitaxy Si Substrate 110 111 110 for MOCVD Reactors Or RF Energy Application","imgUrl":"https:\/\/img.chinax.com\/nimg\/0b\/f0\/13338700276194e5652510469909-200x200-1.jpg","attrs":{"Brand Name":"ZMSH","Model Number":"GaN-on-Si","Delivery Time":"2-4 weeks","Place of Origin":"China","Payment Terms":"T\/T","Mechanical Hardness":"9 Mohs","Young's Modulus":"350 GPa (GaN), 130 GPa (Si)","Epitaxial Growth Method":"MOCVD, HVPE, MBE","Growth Temperature":"1000-1200\u00b0C","Thermal Conductivity":"130-170 W\/m\u00b7K","Emission Wavelength":"365-405 nm (UV\/Blue)","Resistivity":"10\u207b\u00b3-10\u207b\u00b2 \u03a9\u00b7cm","Electron Concentration":"10\u00b9\u2076-10\u00b9\u2079 cm\u207b\u00b3"}}

{"cid":"91184473","title":"4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application","imgUrl":"https:\/\/img.chinax.com\/nimg\/dc\/a3\/960926c5bc96b86feae7223f86b7-200x200-1.jpg","attrs":{"Price":"by case","Brand Name":"ZMSH","Model Number":"6\/8\/12INCH GaN-ON-silicon","Minimum Order Quantity":"1pcs","Delivery Time":"2-4weeks","Certification":"rohs","Place of Origin":"CHINA","Payment Terms":"T\/T, Western Union","Supply Ability":"100pcs","Packaging Details":"single wafer container or 25pcs cassettle box","materials":"silicon substrate","epi layer thickness":"2-7um","Material":"Gallium Nitride Wafer","Traditional manufacturing using":"Molecular beam epitaxy","moq":"1pcs","Size":"4inch\/6inch\/8inch\/12inch","application":"Micro-LED application","Electronic usage":"electronics,high-speed switching circuits,infrared circuits"}}