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MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate

Price: Negotiable Get Latest Price

Brand Name: Original
Model Number: FQPF18N60C
Minimum Order Quantity: 1
Delivery Time: Negotiable
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SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Shenzhen ,

4YRS
Verified Supplier

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ORIGINAL Mosfet Power Transistor Ic Chips SAK-XC2365A-104F80LR AB

Price: $2-$8 Get Latest Price

Brand Name: INFEINEON
Model Number: SAK-XC2365A-104F80LR AB
Minimum Order Quantity: 1PCS
Delivery Time: 1-3 WORKING DAYS
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DINGCEN INTERNATIONAL (HK) LIMITED

Shenzhen ,Guangdong

4YRS
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High Power Amplifier Ic Chips P1db 15dbm-20dbm Output Impedance 50ω

Price: Negotiable Get Latest Price

Brand Name: Negotiable
Model Number: Negotiable
Minimum Order Quantity: Negotiable
Delivery Time: Negotiable
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SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Hong kong ,

4YRS
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Radiation Fin Aluminum Enclosure Heatsink For High Power LED IC Chip Cooler Radiator

Price: USD 2.7~3.0 PCS Get Latest Price

Brand Name: ORIENS
Model Number: -
Minimum Order Quantity: 200 PCS
Delivery Time: 8~15 working days
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Beijing Oriens Technology Co., Ltd.

Beijing ,Beijing

3YRS
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{"cid":"91218829","title":"Bipolar (BJT) Power Transistor Ic Chip 13003 NPN 400V 1.5A Mje13003","imgUrl":"https:\/\/img.chinax.com\/nimg\/47\/b2\/7ae2d58b9acb7e68814402ecfd14-200x200-1.jpg","attrs":{"Price":"$0.10\/pieces 10-99 pieces","Brand Name":"original","Model Number":"mje13003","Minimum Order Quantity":"10 pieces","Type":"IC CHIP, Field-Effect Transistor, IGBT Transistor","Operating Temperature":"standard","Series":"standard","Mounting Type":"standard","Description":"\/","Place of Origin":"Guangdong, China","D\/C":"22+","Package Type":"Throught Hole","Application":"standard","Supplier Type":"Other","Cross Reference":"standard","Media Available":"Other","Brand":"transistor","Current - Collector (Ic) (Max)":"standard","Voltage - Collector Emitter Breakdown (Max)":"standard","Vce Saturation (Max) @ Ib, Ic":"standard","Current - Collector Cutoff (Max)":"standard","DC Current Gain (hFE) (Min) @ Ic, Vce":"standard","Power - Max":"standard","Frequency - Transition":"standard","Package \/ Case":"standard","Resistor - Base (R1)":"standard","Resistor - Emitter Base (R2)":"standard","FET Type":"standard","FET Feature":"Standard","Drain to Source Voltage (Vdss)":"standard","Current - Continuous Drain (Id) @ 25\u00b0C":"standard","Rds On (Max) @ Id, Vgs":"standard","Vgs(th) (Max) @ Id":"standard","Gate Charge (Qg) (Max) @ Vgs":"standard","Input Capacitance (Ciss) (Max) @ Vds":"standard","Frequency":"standard","Current Rating (Amps)":"standard","Noise Figure":"standard","Power - Output":"standard","Voltage - Rated":"standard","Drive Voltage (Max Rds On, Min Rds On)":"standard","Vgs (Max)":"standard","IGBT Type":"\/","Configuration":"\/","Vce(on) (Max) @ Vge, Ic":"\/","Input Capacitance (Cies) @ Vce":"\/","Input":"\/","NTC Thermistor":"\/","Voltage - Breakdown (V(BR)GSS)":"\/","Current - Drain (Idss) @ Vds (Vgs=0)":"\/","Current Drain (Id) - Max":"\/","Voltage - Cutoff (VGS off) @ Id":"\/","Resistance - RDS(On)":"\/","Voltage":"\/","Voltage - Output":"\/","Voltage - Offset (Vt)":"\/","Current - Gate to Anode Leakage (Igao)":"\/","Current - Valley (Iv)":"\/","Current - Peak":"\/","Applications":"\/","Transistor Type":"mrf150 rf power transistor","Packaging Details":"Anti-static packaging","Port":"SHENZHEN","Supply Ability":"1000 Piece\/Pieces per Week"}}