ikw50n65f5

{"cid":"91219332","title":"IKW50N65F5","imgUrl":"https:\/\/img.chinax.com\/nimg\/6a\/16\/f363dd63b907b1a78ec7210cb406-200x200-1.jpg","attrs":{"Gate-Emitter Leakage Current :":"100 nA","Product Category :":"IGBT Transistors","Mounting Style :":"Through Hole","Continuous Collector Current at 25 C :":"80 A","Pd - Power Dissipation :":"305 W","Collector- Emitter Voltage VCEO Max :":"650 V","Package \/ Case :":"TO-247-3","Maximum Operating Temperature :":"+ 175 C","Maximum Gate Emitter Voltage :":"20 V","Configuration :":"Single","Collector-Emitter Saturation Voltage :":"1.9 V","Manufacturer :":"Infineon Technologies","Description":"IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT"}}

{"cid":"91224797","title":"High Speed Switching Infineon IKW50N65F5 IGBT 650V 50A with TRENCHSTOP 5 Technology and RAPID 1 Diode","imgUrl":"https:\/\/img.chinax.com\/nimg\/50\/29\/e407ea82ffb13e590e07198243b6-200x200-1.jpg","attrs":{"Model Number":"IKW50N65F5","Td(off)":"175ns","Pd - Power Dissipation":"305W","Td(on)":"21ns","Collector-Emitter Breakdown Voltage (Vces)":"650V","Reverse Transfer Capacitance (Cres)":"11pF","Gate-Emitter Threshold Voltage (Vge(th)@Ic)":"3.2V@0.5mA","Gate Charge(Qg)":"120nC@15V","Operating Temperature":"-40\u2103~+175\u2103","Reverse Recovery Time(trr)":"52ns","Switching Energy(Eoff)":"160uJ","Turn-On Energy (Eon)":"490uJ","Input Capacitance(Cies)":"3nF","Pulsed Current- Forward(Ifm)":"150A","Output Capacitance(Coes)":"65pF","Description":"305W 650V TO-247-3 Single IGBTs RoHS","Mfr. Part #":"IKW50N65F5","Package":"TO-247-3"}}