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MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Price: Contact for Sample Get Latest Price

Brand Name: MOT
Model Number: MRF581
Minimum Order Quantity: 50
Delivery Time: Within 3days
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Mega Source Elec.Limited

13YRS
Verified Supplier

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AD620ARZ amplifier ic chip Integrated Circuit Chip Low Cost Low Power Instrumentation Amplifier

Price: Negotiate Get Latest Price

Brand Name: Negotiable
Model Number: AD620ARZ
Minimum Order Quantity: 10pcs
Delivery Time: 1 day
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ChongMing Group (HK) Int'l Co., Ltd

Shenzhen ,

4YRS
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Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life

Price: Negotiated Get Latest Price

Brand Name: Hua Xuan Yang
Model Number: AOD413A
Minimum Order Quantity: Negotiation
Delivery Time: 1 - 2 Weeks
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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Shenzhen ,Guangdong

7YRS
Active Member

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Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

Price: 20USD each Get Latest Price

Brand Name: SZHUASHI
Model Number: YP601820T
Minimum Order Quantity: 2 PCS
Delivery Time: 2-7days
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Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Suzhou ,Jiangsu

2YRS
Verified Supplier

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INA-DDF-EVM Embedded Solutions Low-Power Instrumentation Amplifier Evaluation Board

Price: Contact for Sample Get Latest Price

Brand Name: Original Factory
Model Number: INA-DDF-EVM
Minimum Order Quantity: 10
Delivery Time: 3-5 work days
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ShenZhen Mingjiada Electronics Co.,Ltd.

Shenzhen ,

4YRS
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4W 5W 10W low power radio amplifier rf 3ghz 3.5ghz drone signal jammer module

Price: Negotiated Get Latest Price

Brand Name: TX TELSIG
Model Number: TX-GK
Minimum Order Quantity: 10
Delivery Time: In 2 work day
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Shenzhen TeXin electronic Co., Limited

Shenzhen ,Guangdong

7YRS
Verified Supplier

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{"cid":"91218829","title":"FQP6N60C High Voltage Fast-Switching Npn Audio Power Transistor Amplifier New And Original FQP6N60C","imgUrl":"https:\/\/img.chinax.com\/nimg\/68\/fe\/b5eb6e26eba2300b2e24c8d32553-200x200-1.jpg","attrs":{"Price":"$0.03\/pieces 1-999 pieces","Brand Name":"Original","Model Number":"FQP6N60C","Operating Temperature":"standard, standard","Series":"diode triode integrated circuits, FQP6N60C","Mounting Type":"standard, standard","Description":"MOSFET triode electronic components","Type":"Rectifier Diode","Place of Origin":"United States","D\/C":"22+\/23+","Package Type":"Through Hole","Application":"PCB\/PCBA\/SMT\/BOM LIST assembly","Supplier Type":"Original manufacturer, Agency","Max. Forward Voltage":"standard","Max. Reverse Voltage":"standard","Max. Forward Current":"standard","Max. Reverse Current":"standard","Diode Type":"diode triode integrated circuits","Technology":"standard","Voltage - Peak Reverse (Max)":"standard","Current - Average Rectified (Io)":"standard","Voltage - Forward (Vf) (Max) @ If":"standard","Current - Reverse Leakage @ Vr":"standard","Package \/ Case":"standard, TO-220","Diode Configuration":"standard","Voltage - DC Reverse (Vr) (Max)":"standard","Current - Average Rectified (Io) (per Diode)":"standard","Reverse Recovery Time (trr)":"standard","Capacitance @ Vr, F":"standard","Current - Max":"standard","Resistance @ If, F":"standard","Power Dissipation (Max)":"standard","Capacitance Ratio":"standard","Capacitance Ratio Condition":"standard","Configuration":"standard","Voltage - Zener (Nom) (Vz)":"standard","Tolerance":"standard","Impedance (Max) (Zzt)":"standard","Manufacturer":"Manufacturer","Product Category":"MOSFET","Number of Channels":"Number of Channels","Packaging":"Tube","Vds - Drain-Source Breakdown Voltage":"600 V","Vgs - Gate-Source Voltage":"- 30 V, + 30 V","Minimum Operating Temperature":"- 55 C","Maximum Operating Temperature":"+ 150 C","Packaging Details":"According to the regular packaging of the product, add air bubbles to prevent shaking.","Port":"SHENZHEN\/HONGKONG PORT","Supply Ability":"50000 Piece\/Pieces per Week"}}