rgs80ts65hrc11 igbt

{"cid":"91214901","title":"RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N","imgUrl":"https:\/\/img.chinax.com\/nimg\/a5\/12\/56ab9a3e2a852a44bf6336f0ca67-200x200-1.jpg","attrs":{"Price":"Negotiable","Brand Name":"ROHM Semiconductor","Model Number":"RGS80TS65HRC11","Minimum Order Quantity":"50pcs","Supply Ability":"1000000pcs","Voltage - Collector Emitter Breakdown (Max)":"650 V","Current - Collector (Ic) (Max)":"73 A","Current - Collector Pulsed (Icm)":"120 A","Vce(on) (Max) @ Vge, Ic":"2.1V @ 15V, 40A","Power - Max":"272 W","Switching Energy":"1.05mJ (on), 1.03mJ (off)"}}

{"cid":"91224797","title":"High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability","imgUrl":"https:\/\/img.chinax.com\/nimg\/0e\/c6\/2a2412e2d6e9f08557bce8620949-200x200-1.jpg","attrs":{"Model Number":"RGS80TS65HRC11-HXY","Pd - Power Dissipation":"250W","Td(off)":"136ns","Td(on)":"26ns","Collector-Emitter Breakdown Voltage (Vces)":"650V","Input Capacitance(Cies)":"1.52nF@25V","Gate-Emitter Threshold Voltage (Vge(th)@Ic)":"3.2V@250uA","Gate Charge(Qg)":"57nC@15V","Operating Temperature":"-40\u2103~+175\u2103","Reverse Recovery Time(trr)":"56ns","Switching Energy(Eoff)":"430uJ","Turn-On Energy (Eon)":"900uJ","Description":"IGBT 650V 70A 250W Through Hole TO-247","Mfr. Part #":"RGS80TS65HRC11-HXY","Package":"TO-247"}}