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NCP58933ABTTXG GaN IC Enhancement Mode Gallium Nitride Power Transistor PDSO-G16 GaN Power Switch

Price: Contact for Sample Get Latest Price

Brand Name: Original Factory
Model Number: NCP58933ABTTXG
Minimum Order Quantity: 10
Delivery Time: 3-5 work days
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ShenZhen Mingjiada Electronics Co.,Ltd.

Shenzhen ,

5YRS
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200v Silicon Power Transistor High Current Transistor Low Leakage

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Brand Name: OTOMO
Model Number: MMBD1501A
Minimum Order Quantity: 1000-2000 PCS
Delivery Time: 1 - 2 Weeks
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Beijing Silk Road Enterprise Management Services Co.,LTD

Shenzhen ,

6YRS
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Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

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Brand Name: Anterwell
Model Number: 2N6038
Minimum Order Quantity: 20
Delivery Time: 1 day
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Anterwell Technology Ltd.

Shenzhen ,Guangdong

11YRS
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Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

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Brand Name: Negotiable
Model Number: 2N6038
Minimum Order Quantity: 20
Delivery Time: 1 day
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ChongMing Group (HK) Int'l Co., Ltd

Shenzhen ,

4YRS
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High Current NPN Silicon Power Transistor CBI 2SD882PU Designed for Amplification and Switching Uses

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Brand Name: Negotiable
Model Number: 2SD882PU
Minimum Order Quantity: Negotiable
Delivery Time: Negotiable
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Hefei Purple Horn E-Commerce Co., Ltd.

Hefei ,Anhui

1YRS
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MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS

Price: Email us for details Get Latest Price

Brand Name: Negotiable
Model Number: Negotiable
Minimum Order Quantity: 1pcs
Delivery Time: Negotiable
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Wisdtech Technology Co.,Limited

Shenzhen ,Guangdong

4YRS
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EE64 EE65 PQ60 Planar Transformer High Power Density Low Leakage Isolation For DC DC Converter Power Supply

Price: $20 - 50/ Piece,1000-10000pcs Get Latest Price

Brand Name: CHIPSEN
Model Number: EE64 EE65 PQ60
Minimum Order Quantity: 10PCS
Delivery Time: 15-22 wark days
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Dongguan Chipsen Electronics Technology Co., Ltd.

Dongguan ,Guangdong

1YRS
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IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET

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Brand Name: Infineon Technologies
Model Number: IRF3205PBF
Minimum Order Quantity: 50pcs
Delivery Time: 3-5work days
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Shenzhen Retechip Electronics Co., Ltd

Shenzhen ,Guangdong

4YRS
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RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

Price: Negotiable Get Latest Price

Brand Name: Mitsubishi
Model Number: RA03M8087M-101
Minimum Order Quantity: 1 piece
Delivery Time: 1-2 working days
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Shenzhen Koben Electronics Co., Ltd.

Shenzhen ,Guangdong

9YRS
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20K 420 Metal Oxide MOV Surge Protection PWB Low Leakage Current

Price: USD, negotiable, pcs Get Latest Price

Brand Name: QingZhu
Model Number: MYG3-20K420
Minimum Order Quantity: 10000 pcs
Delivery Time: 7-10 days
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XIAN XIWUER ELECTRONIC AND INFO. CO., LTD

Shaanxi

5YRS
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750314783 Low leakage inductance Power Over Ethernet Transformers

Price: Supportive Get Latest Price

Brand Name: Shareway
Model Number: 750314783
Minimum Order Quantity: 100pcs
Delivery Time: Stock or 3-4 weeks
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SHAREWAY TECHNOLOGY CO., LTD.

10YRS
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IEC Socket Type EMI Filters Low Pass Power Filters 6A Low Leakage Current

Price: Negotiable Get Latest Price

Brand Name: YBX
Model Number: YB11A4-6A-Q
Minimum Order Quantity: 500PCS
Delivery Time: 5-8 Work Days
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Shenzhen Yanbixin Technology Co., Ltd.

Shenzhen ,Guangdong

8YRS
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{"cid":"91225864","title":"Custom High Breakdown Voltage Low Leakage 1000 pF MOS Capacitor Ultra Stable TCC Wire Bondable Chip for RF Bypass","imgUrl":"https:\/\/img.chinax.com\/nimg\/92\/d8\/c43a64660f7e7d1b12339b91bfb0-200x200-1.jpg","attrs":{"Price":"","Brand Name":"Hoan","Model Number":"HACC102S80V750","Minimum Order Quantity":"10 Pieces","Delivery Time":"1-2 weeks for standard stock, 3-4 weeks for custom production","Packaging Details":"","Backside Metallization":"TiW-Pt-Au, \u22651.0\u00b5m Au (Pt diffusion barrier)","Payment Terms":"L\/C,D\/A,D\/P,T\/T,","Rated Voltage":"80V DC","Chip Dimensions":"0.75 \u00d7 0.75 \u00d7 0.20 mm (\u00b125\u00b5m tolerance)","Operating Temperature":"-55\u00b0C to +125\u00b0C","Leakage Current @ 25\u00b0C":"<10 nA at 80V DC","Intrinsic Chip ESL":"<0.05 nH (de-embedded)","TDDB Lifetime":">10 years at 125\u00b0C and rated voltage (accelerated life test verified)","Moisture Sensitivity":"MSL 1 (Unlimited floor life per J-STD-020)","Q Factor @ 1MHz":">2000","TCC (Temperature Coefficient)":"0 \u00b130 ppm\/\u00b0C (-55\u00b0C to +125\u00b0C, COG\/NPO Class I)","Substrate Resistivity":">1000 Ohm\u00b7cm, Float-zone Silicon","Leakage Current @ 125\u00b0C":"<100 nA at 80V DC","VCC (DC Bias Coefficient)":"<10 ppm\/V (0V to 80V rated voltage)","Place of Origin":"Shaanxi, China","Dielectric Absorption":"<0.05% @ 1kHz","Dielectric Withstanding Voltage (DWV)":">200V (>2.5\u00d7 rated), 100% production tested","Wire Bond Pull Strength":">6 gf for 25\u00b5m Au wire (MIL-STD-883 Method 2011.7)","Insulation Resistance":"\u226510\u2074 M\u03a9 @ Rated Voltage DC, 25\u00b0C","Design Architecture":"Double-Sided Bordered (Margin)","Self-Resonant Frequency (SRF)":">1.5 GHz chip-level, >600 MHz with 0.5mm Au bond wire","ESR @ 1GHz":"<0.1 Ohm","Dissipation Factor":"\u22640.15% @ 1kHz, 1.0 Vrms","Mounting Type":"Wire Bondable \/ Conductive Epoxy, AuSn Eutectic or Sintered-Ag Die Attach","ESD Rating":"Class 0 (HBM) per JESD22-A114","Certification":"ISO 9001:2015","Supply Ability":"","Capacitance":"1000 pF \u00b110% (custom \u00b15% available)","Top Metallization":"TaN\/TiW\/Ni\/Au, \u22652.5\u00b5m Au"}}