| Holding Current (Ih) | 5mA |
| Current - Gate Trigger(Igt) | 200uA |
| Voltage - On State(Vtm) | 1.5V |
| Average Gate Power Dissipation (PG(AV)) | 100mW |
| Current - On State(It(RMS)) | 800mA |
| Peak off - state voltage(Vdrm) | 400V |
| Current - Surge(Itsm@f) | 9A |
| SCR Type | 1 SCR |
| Gate Trigger Voltage (Vgt) | 800mV |
| Description | 5mA 200uA 400V 1 SCR SOT-89 TRIACs RoHS |
| Mfr. Part # | BT169 |
| Package | SOT-89 |
| Model Number | BT169 |
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Product Specification
| Holding Current (Ih) | 5mA | Current - Gate Trigger(Igt) | 200uA |
| Voltage - On State(Vtm) | 1.5V | Average Gate Power Dissipation (PG(AV)) | 100mW |
| Current - On State(It(RMS)) | 800mA | Peak off - state voltage(Vdrm) | 400V |
| Current - Surge(Itsm@f) | 9A | SCR Type | 1 SCR |
| Gate Trigger Voltage (Vgt) | 800mV | Description | 5mA 200uA 400V 1 SCR SOT-89 TRIACs RoHS |
| Mfr. Part # | BT169 | Package | SOT-89 |
| Model Number | BT169 |
The BT169 (KT169) is an SCR Thyristor designed for various electronic applications. It features repetitive peak off-state voltages up to 400V, an average on-state current of 0.5A, and an RMS on-state current of 0.8A. This device is suitable for applications requiring reliable switching and control of electrical power.
| Parameter | Symbol | BT169-400 | Unit | Test Conditions |
| Repetitive peak off-state voltages | VDRM, VRRM | 400 | V | IDRM=IRRM50uA |
| Average on-state current | IT(AV) | 0.5 | A | |
| RMS on-state current | IT(RMS) | 0.8 | A | |
| Non-Repetitive peak on-state current (t=10ms) | ITSM | 8 | A | |
| Non-Repetitive peak on-state current (t=8.3ms) | ITSM | 9 | A | |
| Repetitive Rate of rise of on-state Current after Triggering | dIT/dt | 50 | A/us | |
| Circuit Fusing Considerations (t = 10ms) | I2t | 0.32 | A2s | |
| Peak Gate Current | IGM | 1 | A | |
| Peak Gate Voltage | VGM | 5 | V | |
| Peak Gate Voltage (Reverse) | VGRM | 5 | V | |
| Peak Gate Power | PGM | 2 | W | |
| Average Gate Power | PGF(AV) | 0.1 | W | |
| Forward Thermal Resistance Junction to Ambient | RthJA | 150 | K/W | |
| Thermal Resistance Junction to Case | RthJC | 60 | K/W | |
| Junction Temperature | TJ | 125 | C | |
| Storage Temperature Range | Tstg | -40 to 150 | C | |
| Off-state Leakage Current | ID,IR | 0.1 | mA | VDRM=VRRM(max);Tj=125; RGK=1k |
| On-state Voltage | VTM | 1.5 | V | IT=1A |
| Gate Trigger Current (Continuous dc) | IGT | 200 | uA | VD=12V, IT=10mA |
| Latching Current | IL | 6 | mA | VD=12V, IGT=0.5mA; RGK=1k |
| Holding Current | IH | 5 | mA | VD=12V, IGT=0.5mA; RGK=1k |
| Critical Rate of rise of off-state Voltage | dVD/dt | 25 | V/us | VDM=67% VDRM(max); Tj=125 exponential waveform; RGK=1k |
| Gate Controlled turn-on time | tgt | 2 | us | ITM=2A; VD=VDRM(max),G=10mA; dIG/dt=0.1A/us |
| Circuit Commutated turn-off time | tq | 100 | us | VD=67% VDRM(max); Tj=125, TM=1.6A; VR=35V; dITM/dt=30A/us,dVD/dt=2V/us; RGK=1k |
| Gate Trigger Voltage | VGT | 0.8 | V | VD=12V, IT=10mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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