| Holding Current (Ih) | 50mA |
| Current - Gate Trigger(Igt) | 35mA |
| Voltage - On State(Vtm) | 1.55V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 25A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 250A@25ms |
| SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.3V |
| Operating Temperature | -40℃~+125℃@(Tj) |
| Description | 50mA 35mA 800V 1 TRIAC TO-3P-3 TRIACs RoHS |
| Mfr. Part # | BTA26-800CW |
| Package | TO-3P-3 |
| Model Number | BTA26-800CW |
View Detail Information
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Product Specification
| Holding Current (Ih) | 50mA | Current - Gate Trigger(Igt) | 35mA |
| Voltage - On State(Vtm) | 1.55V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 25A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 250A@25ms | SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.3V | Operating Temperature | -40℃~+125℃@(Tj) |
| Description | 50mA 35mA 800V 1 TRIAC TO-3P-3 TRIACs RoHS | Mfr. Part # | BTA26-800CW |
| Package | TO-3P-3 | Model Number | BTA26-800CW |
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD offers TO-3PK Plastic-Encapsulate TRIACs, featuring an NPNPN 5-layer structure and mesa glass passivated technology. These TRIACs are designed with multi-layers metal electrodes, offering high junction temperature, good commutation performance, and high dV/dt and dI/dt. They are suitable for applications such as heater control, mixers, and motor speed controllers.
| Part Number | VDRM/VRRM (V) | IT(RMS) (A) | ITSM (A) | I2t (A2s) | dIT/dt (A/s) | IGM (A) | PG(AV) (W) | VTM (V) | IDRM/IRRM (A/mA) | Rth(j-c) (/W) | Rth(j-a) (/W) |
| BTA26-600(C/B)W | 600 | 25 | 250 | 340 | 50 | 4 | 1 | 1.55 | 5 (25), 2.0 (125) | 0.9 | 50 |
| BTA26-800(C/B)W | 800 | 25 | 250 | 340 | 50 | 4 | 1 | 1.55 | 5 (25), 2.0 (125) | 0.9 | 50 |
| Symbol | Parameter | Test Condition | Quadrant | Value (CW) | Value (BW) | Unit |
| IGT | Gate trigger current | VD=12V, RL=33, Tj=25, Fig. 6 | -- | 35 | 50 | mA |
| VGT | Gate trigger voltage | -- | 1.3 | 1.3 | V | |
| VGD | Non-triggering gate voltage | VD=VDRM, Tj=125 | 0.2 | 0.2 | V | |
| IH | Holding current | IT=500mA, Fig. 6 | 50 | 75 | mA | |
| IL | Latching current | IG=1.2IGT, Fig. 6 | - | 60 | 80 | mA |
| 80 | 90 | mA | ||||
| dVD/dt | Critical rate of rise of off-state | VD=67%VDRM, Gate Open, Tj=125 | 500 | 1000 | V/s | |
| VTM | On-state Voltage | ITM=25A, tp=380s, Fig. 4 | 1.55 | 1.55 | V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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