| Holding Current (Ih) | 25mA |
| Voltage - On State(Vtm) | 1.55V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 800V |
| SCR Type | 1 TRIAC |
| Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.5V |
| Description | TRIAC 800V 12A Surface Mount TO-252 |
| Mfr. Part # | BT138S-800E |
| Package | TO-252 |
| Model Number | BT138S-800E |
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Product Specification
| Holding Current (Ih) | 25mA | Voltage - On State(Vtm) | 1.55V |
| Average Gate Power Dissipation (PG(AV)) | 1W | Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 800V | SCR Type | 1 TRIAC |
| Operating Temperature | -40℃~+125℃ | Gate Trigger Voltage (Vgt) | 1.5V |
| Description | TRIAC 800V 12A Surface Mount TO-252 | Mfr. Part # | BT138S-800E |
| Package | TO-252 | Model Number | BT138S-800E |
The BT138 Series TRIACs from ShenZhenHanKingyuan Electronic are 12A, 4-quadrant TRIACs designed for AC power control applications. They offer reliable performance with features like low gate trigger voltage and high surge current capability. These TRIACs are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
| Parameter | Conditions | BT138-600 | BT138-800 | Unit |
| Repetitive Peak Off-State Voltage (VDRM, VRRM) | 600 | 800 | V | |
| R.M.S On-State Current (IT(RMS)) | Tc=110C | 12 | A | |
| Surge On-State Current (ITSM) | Tp=10ms | 115/120 | A | |
| It for fusing | Tp=10ms | 70 | As | |
| Average Gate Power Dissipation (PG(AV)) | Tj=125C | 1 | W | |
| Peak Gate Current (IGM) | Tj=125C, tp=20us | 4 | A | |
| Operating Junction Temperature (Tj) | -40~125 | C | ||
| Storage Temperature (TSTG) | -40~150 | C | ||
| Repetitive Peak Off-State Current (IDRM) | Tj=25C | ≤5 | uA | |
| Repetitive Peak Off-State Current (IDRM) | Tj=125C | ≤1 | mA | |
| Repetitive Peak Reverse Current (IRRM) | Tj=25C | ≤5 | uA | |
| Repetitive Peak Reverse Current (IRRM) | Tj=125C | ≤1 | mA | |
| Forward "on" voltage (VTM) | IT=35A, tp=380us | ≤1.55 | V | |
| Gate trigger voltage (VGT) | VD=12V, RL=30 | ≤1.5 | V | |
| Critical-rate of rise of commutation current (di/dt) | I,II,III, Tj=125C, IG=2XIGT, tr ≤100ns, F=100Hz | ≥50 | A /us | |
| Critical-rate of rise of commutation current (di/dt) | IV, Tj=125C, IG=2XIGT, tr ≤100ns, F=100Hz | ≥10 | A /us | |
| Gate trigger current (IGT) | I,II,III, VD=12V RL=30 | ≤5 | ≤10 | mA |
| Gate trigger current (IGT) | I,II,III, VD=12V RL=30 | ≤25 | ≤50 | mA |
| Gate trigger current (IGT) | IV, VD=12V RL=30 | ≤10 | ≤25 | mA |
| Gate trigger current (IGT) | IV, VD=12V RL=30 | ≤70 | ≤100 | mA |
| Holding current (IH) | IT=0.2A | ≤10 | ≤25 | mA |
| Holding current (IH) | IT=0.2A | ≤30 | ≤60 | mA |
| Gate non-trigger voltage (VGD) | ALL, VD=VDRM TJ=125C,RL=3.3K | ≥0.2 | V | |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM, tp=10ms | ≥5 | ≥10 | V/us |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM, tp=16.7ms | ≥50 | ≥200 | V/us |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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