| Voltage - On State(Vtm) | 1.55V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 126A |
| SCR Type | 1 TRIAC |
| Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.3V |
| Description | TRIAC 800V 12A Through Hole TO-220 |
| Mfr. Part # | BTA12-800B |
| Package | TO-220 |
| Model Number | BTA12-800B |
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Product Specification
| Voltage - On State(Vtm) | 1.55V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 12A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 126A | SCR Type | 1 TRIAC |
| Operating Temperature | -40℃~+125℃ | Gate Trigger Voltage (Vgt) | 1.3V |
| Description | TRIAC 800V 12A Through Hole TO-220 | Mfr. Part # | BTA12-800B |
| Package | TO-220 | Model Number | BTA12-800B |
The ShenZhenHanKingyuan Electronic CO.,Ltd BTA/BTB12 Series TRIACs are high-performance semiconductor devices designed for AC power control applications. Available in 3-quadrant and 4-quadrant configurations, these TRIACs offer a high on-state current of 12A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. The series is offered in various package types: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), and TO-263.
| Series | Type | VDRM/VRRM (V) | IT(RMS) (A) | VGT (V) | Package |
|---|---|---|---|---|---|
| BTA/BTB12 | 3 Quadrants | 800, 1000 | 12 | ≤1.3 | TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263 |
| BTA/BTB12 | 4 Quadrants | 800, 1000 | 12 | ≤1.3 | TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263 |
| Parameter | Condition | Rating | Unit |
|---|---|---|---|
| IT(RMS) R.M.S On-State Current | Tc=110C | 12 | A |
| ITSM Surge On-State Current | Tp=10ms | 120/126 | A |
| It for fusing | Tp=10ms | 78 | As |
| PG(AV) Average Gate Power Dissipation | Tj=125C | 1 | W |
| IGM Peak Gate Current | tp=20us, Tj=125C | 4 | A |
| Tj Operating Junction Temperature | -40~125 | C | |
| TSTG Storage Temperature | -40~150 | C | |
| IDRM Repetitive Peak Off-State Current | Tj=25C | ≤5 | uA |
| IDRM Repetitive Peak Off-State Current | Tj=125C | ≤1 | mA |
| IRRM Repetitive Peak Reverse Current | Tj=25C | ≤5 | uA |
| IRRM Repetitive Peak Reverse Current | Tj=125C | ≤1 | mA |
| VTM Forward "on" voltage | IT=17A, tp=380us | 1.55 | V |
| di/dt Critical rate of rise of on-state current | I,II,III, F=100Hz, IG=2xIGT, tr ≤100ns | ≥50 | A/us |
| di/dt Critical rate of rise of on-state current | IV, F=100Hz, IG=2xIGT, tr ≤100ns | ≥10 | A/us |
| IGT Gate trigger current | I,II,III, VD=12V, RL=30Ω | ≤5, ≤10, ≤25, ≤50, ≤25, ≤50 | mA |
| IGT Gate trigger current | IV, VD=12V, RL=30Ω | ≤50, ≤100 | mA |
| IH Holding current | IT=0.2A | ≤20, ≤25, ≤35, ≤50, ≤25, ≤50 | mA |
| VGD Gate non-trigger voltage | ALL, VD=VDRM, TJ=125°C,RL=3.3KΩ | ≥0.2 | V |
| dv/dt Critical-rate of rise of commutation voltage | TJ=125°C, VD=2/3VDRM, Gate | ≥40, ≥100, ≥400, ≥1000, ≥200, ≥400 | V/us |
| Rth(j-c) Thermal resistance Junction to case | 3.3 | °C/W | |
| Rth(j-a) Thermal resistance Junction to ambient | 60 | °C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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