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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Durable KY BTA12-800B TRIAC Semiconductor Device for AC Motor Speed Regulation
China Durable KY BTA12-800B TRIAC Semiconductor Device for AC Motor Speed Regulation

  1. China Durable KY BTA12-800B TRIAC Semiconductor Device for AC Motor Speed Regulation

Durable KY BTA12-800B TRIAC Semiconductor Device for AC Motor Speed Regulation

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Voltage - On State(Vtm) 1.55V
Average Gate Power Dissipation (PG(AV)) 1W
Current - On State(It(RMS)) 12A
Peak off - state voltage(Vdrm) 800V
Current - Surge(Itsm@f) 126A
SCR Type 1 TRIAC
Operating Temperature -40℃~+125℃
Gate Trigger Voltage (Vgt) 1.3V
Description TRIAC 800V 12A Through Hole TO-220
Mfr. Part # BTA12-800B
Package TO-220
Model Number BTA12-800B

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  1. Product Details
  2. Company Details

Product Specification

Voltage - On State(Vtm) 1.55V Average Gate Power Dissipation (PG(AV)) 1W
Current - On State(It(RMS)) 12A Peak off - state voltage(Vdrm) 800V
Current - Surge(Itsm@f) 126A SCR Type 1 TRIAC
Operating Temperature -40℃~+125℃ Gate Trigger Voltage (Vgt) 1.3V
Description TRIAC 800V 12A Through Hole TO-220 Mfr. Part # BTA12-800B
Package TO-220 Model Number BTA12-800B

Product Overview

The ShenZhenHanKingyuan Electronic CO.,Ltd BTA/BTB12 Series TRIACs are high-performance semiconductor devices designed for AC power control applications. Available in 3-quadrant and 4-quadrant configurations, these TRIACs offer a high on-state current of 12A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. The series is offered in various package types: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), and TO-263.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
  • Origin: Shenzhen
  • Trademark: KY logo (registered)

Technical Specifications

Series Type VDRM/VRRM (V) IT(RMS) (A) VGT (V) Package
BTA/BTB12 3 Quadrants 800, 1000 12 ≤1.3 TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263
BTA/BTB12 4 Quadrants 800, 1000 12 ≤1.3 TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263
Parameter Condition Rating Unit
IT(RMS) R.M.S On-State Current Tc=110C 12 A
ITSM Surge On-State Current Tp=10ms 120/126 A
It for fusing Tp=10ms 78 As
PG(AV) Average Gate Power Dissipation Tj=125C 1 W
IGM Peak Gate Current tp=20us, Tj=125C 4 A
Tj Operating Junction Temperature -40~125 C
TSTG Storage Temperature -40~150 C
IDRM Repetitive Peak Off-State Current Tj=25C ≤5 uA
IDRM Repetitive Peak Off-State Current Tj=125C ≤1 mA
IRRM Repetitive Peak Reverse Current Tj=25C ≤5 uA
IRRM Repetitive Peak Reverse Current Tj=125C ≤1 mA
VTM Forward "on" voltage IT=17A, tp=380us 1.55 V
di/dt Critical rate of rise of on-state current I,II,III, F=100Hz, IG=2xIGT, tr ≤100ns ≥50 A/us
di/dt Critical rate of rise of on-state current IV, F=100Hz, IG=2xIGT, tr ≤100ns ≥10 A/us
IGT Gate trigger current I,II,III, VD=12V, RL=30Ω ≤5, ≤10, ≤25, ≤50, ≤25, ≤50 mA
IGT Gate trigger current IV, VD=12V, RL=30Ω ≤50, ≤100 mA
IH Holding current IT=0.2A ≤20, ≤25, ≤35, ≤50, ≤25, ≤50 mA
VGD Gate non-trigger voltage ALL, VD=VDRM, TJ=125°C,RL=3.3KΩ ≥0.2 V
dv/dt Critical-rate of rise of commutation voltage TJ=125°C, VD=2/3VDRM, Gate ≥40, ≥100, ≥400, ≥1000, ≥200, ≥400 V/us
Rth(j-c) Thermal resistance Junction to case 3.3 °C/W
Rth(j-a) Thermal resistance Junction to ambient 60 °C/W

2410121317_KY-BTA12-800B_C2831700.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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