Hefei Purple Horn E-Commerce Co., Ltd.
| Input Resistor | 13kΩ |
| Collector - Emitter Voltage VCEO | 40V |
| Description | 40V SOT-23-6 Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | 2SC164S_R1_00001 |
| Package | SOT-23-6 |
| Model Number | 2SC164S_R1_00001 |
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Product Specification
| Input Resistor | 13kΩ | Collector - Emitter Voltage VCEO | 40V |
| Description | 40V SOT-23-6 Single, Pre-Biased Bipolar Transistors RoHS | Mfr. Part # | 2SC164S_R1_00001 |
| Package | SOT-23-6 | Model Number | 2SC164S_R1_00001 |
The P2SC164S is an application-specific multichip circuit designed for voltage up to 40V and current up to 150mA. It features a Silicon NPN epitaxial type construction, integrating one NPN Transistor (Q1) and one NPN Base Accessible Pre-biased Transistor (Q2). This design offers advantages through reductions in component count and footprint. The product is lead-free in compliance with EU RoHS2.0 directives and uses a green molding compound as per IEC61249 Std., making it Halogen Free.
| Parameter | Symbol | Q1 Limit (Units) | Q2 Limit (Units) | Test Condition (TA=25 o C unless otherwise noted) | Min. | Typ. | Max. | Units | |
| OFF Characteristics | Collector-Emitter Breakdown Voltage | 40 (V) | 30 (V) | IC= 1mA, IB= 0A | 40 | - | - | V | |
| Collector-Base Breakdown Voltage | 60 (V) | 30 (V) | IC= 10uA, IE= 0A (Q1); IC= 50uA, IE= 0A (Q2) | 60 | - | - | V | ||
| Emitter-Base Breakdown Voltage | 6 (V) | 5 (V) | IE= 10u A, IC= 0A (Q1); IE= 50u A, IC= 0A (Q2) | 6 | - | - | V | ||
| Collector Cutoff Current | - | 50 (nA) | 0.5 (uA) | VCE= 30V, VEB = 3V (Q1); VCB= 30V, IE= 0A (Q2) | - | - | 50 | nA | |
| Base Cutoff Current | IBL | 50 (nA) | - | VCE= 30V, VEB = 3V | - | - | 50 | nA | |
| Emitter Cutoff Current | IEBO | - | 0.5 (uA) | VEB= 4V | - | - | 0.5 | uA | |
| ON characteristics | DC Current Gain | hFE | 40 / 70 / 100 / 60 / 30 | 100 | VCE= 1V, IC= 0.1mA / 1mA / 10mA / 50mA / 100mA (Q1); VCE= 5V, IC= 150mA (Q2) | 40 | - | 300 | - |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 200 / 300 (mV) | 300 (mV) | IC= 10mA, IB= 1mA (Q1); IC= 10mA, IB= 1mA (Q2); IC= 50mA, IB= 5mA (Q1) | - | - | 300 | mV | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 850 / 950 (mV) | - | IC= 10mA, IB= 1mA (Q1); IC= 50mA, IB= 5mA (Q1) | - | - | 950 | mV | |
| Transition Frequency | fT | 300 (MHz) | 250 (MHz) | VCE= 20V, IC= 10mA (Q1); VCE= 10V, IE= -5mA (Q2) | 300 | - | - | MHz | |
| Collector-Base Capacitance | CCBO | - | - | VCB= 5V, f= 1MHz | - | - | 4 | pF | |
| Emitter-Base Capacitance | CEBO | - | - | VEB= 0.5V, f= 1MHz | - | - | 8 | pF | |
| Input Resistance | R1 | - | 7 / 10 / 13 (Kohm) | - | 7 | 10 | 13 | Kohm | |
| Maximum Ratings | Collector-Base Voltage | VCBO | 60 (V) | 30 (V) | (TA=25 o C unless otherwise noted) | - | - | - | V |
| Collector-Emitter Voltage | VCEO | 40 (V) | 30 (V) | (TA=25 o C unless otherwise noted) | - | - | - | V | |
| Emitter-Base Voltage | VEBO | 6 (V) | 5 (V) | (TA=25 o C unless otherwise noted) | - | - | - | V | |
| Collector Current (DC) | IC | 200 (mA) | 150 (mA) | (TA=25 o C unless otherwise noted) | - | - | - | mA | |
| Thermal Characteristics | Collector Power Dissipation | PD | 1 (W) | - | (Note) (TA=25 o C unless otherwise noted) | - | - | 1 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55~150 (oC) | - | (TA=25 o C unless otherwise noted) | -55 | - | 150 | oC | |
| Thermal Resistance from Junction to Ambient | RJA | 125 (oC/W) | - | (Note) (TA=25 o C unless otherwise noted) | - | - | 125 | oC/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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