Hefei Purple Horn E-Commerce Co., Ltd.
| Resistor Ratio | 21 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | 50V SC-74 Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | PUMD10-QX |
| Package | SC-74 |
| Model Number | PUMD10-QX |
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Product Specification
| Resistor Ratio | 21 | Collector - Emitter Voltage VCEO | 50V |
| Description | 50V SC-74 Single, Pre-Biased Bipolar Transistors RoHS | Mfr. Part # | PUMD10-QX |
| Package | SC-74 | Model Number | PUMD10-QX |
Product Overview
The Nexperia PUMD10-Q is an NPN/PNP double Resistor-Equipped Transistor (RET) designed for low current peripheral driving and control of IC inputs. Featuring built-in bias resistors, this device simplifies circuit design, reduces component count, and lowers pick-and-place costs. It is qualified according to AEC-Q101 and recommended for automotive applications, making it suitable for digital applications where it can replace general-purpose transistors.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General | ||||||
| R1 bias resistor | 1.54 | 2.2 | 2.86 | k | ||
| R2/R1 bias resistor ratio | 17 | 21 | 26 | |||
| Per transistor; for the PNP transistor (TR2) with negative polarity, where applicable | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | 100 | mA | |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 180 | A |
| hFE | DC current gain | VCE = 5 V; IC = 10 mA | 100 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = 5 mA; IB = 0.25 mA | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 0.6 | 0.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 5 mA | 1.1 | 0.75 | - | V |
| TR1 (NPN) | ||||||
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz [2] | - | 230 | - | MHz |
| TR2 (PNP) | ||||||
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz [2] | - | 180 | - | MHz |
| Limiting values | ||||||
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| VI | Input voltage | Positive (input voltage TR1) | - | - | 12 | V |
| VI | Input voltage | Negative (input voltage TR1) | - | -5 | - | V |
| VI | Input voltage | Positive (input voltage TR2) | - | - | 5 | V |
| VI | Input voltage | Negative (input voltage TR2) | - | -12 | - | V |
| IO | Output current | - | - | 100 | mA | |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb 25 C [1] (Per device) | - | - | 300 | mW |
| Tj | Junction temperature | - | - | 150 | C | |
| Tamb | Ambient temperature | -65 | - | 150 | C | |
| Tstg | Storage temperature | -65 | - | 150 | C | |
| Thermal characteristics | ||||||
| Rth(j-a) | Thermal resistance junction to ambient | In free air [1] (Per transistor) | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | In free air [1] (Per device) | - | - | 417 | K/W |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Characteristics of built-in transistor
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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