Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 1 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363) |
| Mfr. Part # | PUMH15,115 |
| Package | TSSOP-6(SOT-363) |
| Model Number | PUMH15,115 |
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Product Specification
| Output Voltage(VO(on)) | - | Input Resistor | 4.7kΩ |
| Resistor Ratio | 1 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363) | Mfr. Part # | PUMH15,115 |
| Package | TSSOP-6(SOT-363) | Model Number | PUMH15,115 |
The Nexperia PUMH15 is a highly integrated NPN/NPN resistor-equipped double transistor (RET) designed for efficient low-current peripheral driving and digital input control. Featuring built-in bias resistors, it simplifies circuit design, reduces component count, and lowers pick-and-place costs. This compact device is ideal for applications requiring simplified logic and interface circuits.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | [1] | 3.3 | 4.7 | 6.1 | k |
| R2/R1 | Bias resistor ratio | Tamb = 25 C [1] | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 10 | V |
| VI | Input voltage | positive | - | - | 30 | V |
| VI | Input voltage | negative | - | - | -10 | V |
| IO | Output current | - | - | - | 100 | mA |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb = 25 C [1] | - | - | 300 | mW |
| Thermal characteristics | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 417 | K/W |
| Characteristics | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 900 | A |
| hFE | DC current gain | VCE = 5 V; IC = 10 mA; Tamb = 25 C | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 1.1 | 0.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA; Tamb = 25 C | 2.5 | 1.9 | - | V |
| R1 | Bias resistor 1 (input) | [1] | 3.3 | 4.7 | 6.1 | k |
| R2/R1 | Bias resistor ratio | Tamb = 25 C [1] | 0.8 | 1 | 1.2 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 230 | - | MHz |
[1] See "Section 11: Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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