Hefei Purple Horn E-Commerce Co., Ltd.
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Operating Temperature | -55℃~+150℃ |
| type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| Number | 1 N-channel |
| Pd - Power Dissipation | 104W |
| Input Capacitance(Ciss) | 3.75nF |
| Description | 4V 1 N-channel 104W PowerPAKSO-8 Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | SIR668ADP-T1-RE3 |
| Package | PowerPAKSO-8 |
| Model Number | SIR668ADP-T1-RE3 |
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Product Specification
| Gate Threshold Voltage (Vgs(th)) | 4V | Operating Temperature | -55℃~+150℃ |
| type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| Number | 1 N-channel | Pd - Power Dissipation | 104W |
| Input Capacitance(Ciss) | 3.75nF | Description | 4V 1 N-channel 104W PowerPAKSO-8 Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | SIR668ADP-T1-RE3 | Package | PowerPAKSO-8 |
| Model Number | SIR668ADP-T1-RE3 |
The SiR668ADP is a high-performance N-Channel Power MOSFET featuring TrenchFET Gen IV technology. It offers a very low RDS(on) x Qg figure-of-merit (FOM), optimized for the lowest RDS(on) x Qoss FOM. This MOSFET is 100% tested for Rg and UIS, making it suitable for demanding applications such as synchronous rectification, primary side switching, DC/DC converters, OR-ing, power supplies, motor drive control, and battery/load switching.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 A | 100 | - | - | V |
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 A | 2 | - | 4 | V |
| Zero gate voltage drain current | IDSS | VDS = 100 V, VGS = 0 V | - | - | 1 | A |
| Drain-source on-state resistance | RDS(on) | VGS = 10 V, ID = 20 A | - | 0.0040 | 0.0048 | |
| Drain-source on-state resistance | RDS(on) | VGS = 7.5 V, ID = 15 A | - | 0.0054 | 0.0070 | |
| Total gate charge | Qg | VDS = 50 V, VGS = 10 V, ID = 10 A | - | 54 | 81 | nC |
| Total gate charge | Qg | VDS = 50 V, VGS = 7.5 V, ID = 10 A | - | 42 | 63 | nC |
| Continuous drain current | ID | TC = 25 C | - | - | 93.6 | A |
| Continuous drain current | ID | TC = 70 C | - | - | 74.8 | A |
| Pulsed drain current | IDM | (t = 100 s) | - | - | 200 | A |
| Single pulse avalanche current | IAS | L = 0.1 mH | - | - | 35 | A |
| Single pulse avalanche energy | EAS | - | - | - | 61.2 | mJ |
| Maximum power dissipation | PD | TC = 25 C | - | - | 104 | W |
| Maximum power dissipation | PD | TC = 70 C | - | - | 66.6 | W |
| Maximum junction-to-ambient thermal resistance | RthJA | t 10 s | - | 15 | 20 | C/W |
| Maximum junction-to-case (drain) thermal resistance | RthJC | Steady state | - | 0.9 | 1.2 | C/W |
| Operating junction and storage temperature range | TJ, Tstg | - | -55 | - | +150 | C |
| Soldering recommendations (peak temperature) | - | - | - | - | 260 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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