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Hefei Purple Horn E-Commerce Co., Ltd.

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China Nexperia NHUMH13X NPN Resistor Equipped Double Transistor 80 Volt 100 Milliamper
China Nexperia NHUMH13X NPN Resistor Equipped Double Transistor 80 Volt 100 Milliamper

  1. China Nexperia NHUMH13X NPN Resistor Equipped Double Transistor 80 Volt 100 Milliamper

Nexperia NHUMH13X NPN Resistor Equipped Double Transistor 80 Volt 100 Milliamper

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Input Resistor 4.7kΩ
Resistor Ratio 10
Collector - Emitter Voltage VCEO 80V
Description 80V TSSOP-6 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # NHUMH13X
Package TSSOP-6
Model Number NHUMH13X

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  1. Product Details
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Product Specification

Input Resistor 4.7kΩ Resistor Ratio 10
Collector - Emitter Voltage VCEO 80V Description 80V TSSOP-6 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # NHUMH13X Package TSSOP-6
Model Number NHUMH13X

Nexperia NHUMH10/13/9 Series: 80 V, 100 mA NPN/NPN Resistor-Equipped Double Transistors

Product Overview

The Nexperia NHUMH10/13/9 series comprises NPN/NPN Resistor-Equipped Double Transistors (RET) in a compact SOT363 (SC-88) SMD plastic package. These devices offer a 100 mA output current capability and high breakdown voltage, featuring built-in resistors that simplify circuit design, reduce component count, and lower pick and place costs. Qualified to AEC-Q101 standards, they are ideal for digital applications, serving as a cost-saving alternative for BC846 series in digital applications, controlling IC inputs, and switching loads.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Technology: NPN/NPN Resistor-Equipped Double Transistors (RET)
  • Qualification: AEC-Q101 qualified

Technical Specifications

Model R1 (k) R2 (k) VCEO (V) IO (mA) Marking Code
NHUMH10 2.2 47 80 100 6H%
NHUMH13 4.7 47 80 100 6K%
NHUMH9 10 47 80 100 6G%
Parameter Condition Min Typ Max Unit
Per Transistor Electrical Characteristics
Collector-emitter voltage (open base) Tamb = 25 C - - 80 V
Output current Tamb = 25 C - - 100 mA
Collector-base voltage (open emitter) Tamb = 25 C - - 80 V
Emitter-base voltage (open collector) Tamb = 25 C - - 7 V
Input voltage (NHUMH10) Tamb = 25 C -7 - +20 V
Input voltage (NHUMH13) Tamb = 25 C -7 - +30 V
Input voltage (NHUMH9) Tamb = 25 C -7 - +40 V
Collector-base breakdown voltage IC = 100 A; IE = 0 A 80 - - V
Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A 80 - - V
Collector-base cut-off current VCB = 80 V; IE = 0 A - - 100 nA
Collector-emitter cut-off current VCE = 60 V; IB = 0 A - - 100 nA
Collector-emitter cut-off current (Tj = 150 C) VCE = 60 V; IB = 0 A - - 5 A
Emitter-base cut-off current (NHUMH10) VEB = 7 V; IC = 0 A - - 270 A
Emitter-base cut-off current (NHUMH13) VEB = 7 V; IC = 0 A - - 260 A
Emitter-base cut-off current (NHUMH9) VEB = 7 V; IC = 0 A - - 230 A
DC current gain VCE = 5 V; IC = 10 mA 100 - - -
Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 100 mV
Off-state input voltage (NHUMH10) VCE = 5 V ; IC = 100 A - 595 500 mV
Off-state input voltage (NHUMH13) VCE = 5 V ; IC = 100 A - 625 500 mV
Off-state input voltage (NHUMH9) VCE = 5 V ; IC = 100 A - 690 500 mV
On-state input voltage (NHUMH10) VCE = 0.3 V ; IC = 10 mA 1.2 0.81 - V
On-state input voltage (NHUMH13) VCE = 0.3 V ; IC = 10 mA 1.4 0.95 - V
On-state input voltage (NHUMH9) VCE = 0.3 V ; IC = 10 mA 1.6 1.22 - V
Bias resistor 1 (input) (NHUMH10) - 1.54 2.2 2.86 k
Bias resistor 1 (input) (NHUMH13) - 3.3 4.7 6.1 k
Bias resistor 1 (input) (NHUMH9) - 7 10 13 k
Bias resistor ratio (R2/R1) (NHUMH10) - 17 21 26 -
Bias resistor ratio (R2/R1) (NHUMH13) - 8 10 12 -
Bias resistor ratio (R2/R1) (NHUMH9) - 3.7 4.7 5.7 -
Transition frequency (built-in transistor) VCE = 5 V; IC = 10 mA; f = 100 MHz - 170 - MHz
Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF
Limiting Values
Total power dissipation (per device) Tamb 25 C (FR4 PCB) - - 350 mW
Total power dissipation (per transistor) Tamb 25 C (FR4 PCB) - - 235 mW
Junction temperature - - - 150 C
Storage temperature - -65 - 150 C
Thermal Characteristics
Thermal resistance (junction to ambient, per device) In free air (FR4 PCB) - - 358 K/W
Thermal resistance (junction to ambient, per transistor) In free air (FR4 PCB) - - 532 K/W
Thermal resistance (junction to solder point) - - - 150 K/W

2411121107_Nexperia-NHUMH13X_C3588715.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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