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Hefei Purple Horn E-Commerce Co., Ltd.

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China Surface Mounted NPN PNP Double Resistor Equipped Transistors Nexperia PUMD12 115
China Surface Mounted NPN PNP Double Resistor Equipped Transistors Nexperia PUMD12 115

  1. China Surface Mounted NPN PNP Double Resistor Equipped Transistors Nexperia PUMD12 115

Surface Mounted NPN PNP Double Resistor Equipped Transistors Nexperia PUMD12 115

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Output Voltage(VO(on)) -
Input Resistor 61kΩ
Resistor Ratio 1.2
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-363
Mfr. Part # PUMD12,115
Package SOT-363
Model Number PUMD12,115

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Product Specification

Output Voltage(VO(on)) - Input Resistor 61kΩ
Resistor Ratio 1.2 Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-363 Mfr. Part # PUMD12,115
Package SOT-363 Model Number PUMD12,115

Nexperia PEMD12; PUMD12 NPN/PNP Resistor-Equipped Transistors

Product Overview

The Nexperia PEMD12 and PUMD12 are NPN/PNP double Resistor-Equipped Transistors (RETs) in Surface-Mounted Device (SMD) plastic packages. These devices feature built-in bias resistors, reducing component count, pick-and-place costs, and simplifying circuit design. They are AEC-Q101 qualified and suitable for low current peripheral driver applications, control of IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN/PNP double Resistor-Equipped Transistors (RETs)
  • Certifications: AEC-Q101 qualified

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 33 47 61 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage TR1 Positive - - +40 V
VI Input voltage TR1 Negative - - -10 V
VI Input voltage TR2 Positive - - +10 V
VI Input voltage TR2 Negative - - -40 V
ICM Peak collector current Single pulse; tp 1 ms - - 100 mA
Per device
Ptot Total power dissipation Tamb 25 C (PEMD12 SOT666) - - 300 mW
Ptot Total power dissipation Tamb 25 C (PUMD12 SOT363) - - 300 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - +150 C
Tstg Storage temperature - -65 - +150 C
Thermal characteristics (FR4 PCB, standard footprint)
Rth(j-a) Thermal resistance from junction to ambient in free air (PEMD12 SOT666) - - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PUMD12 SOT363) - - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PEMD12 SOT666) Per device - - 417 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PUMD12 SOT363) Per device - - 417 K/W
Characteristics (Tamb = 25 C unless otherwise specified)
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 90 A
hFE DC current gain VCE = 5 V; IC = 5 mA 80 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 1.2 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 2 mA 3 1.6 - V
R1 Bias resistor 1 (input) - 33 47 61 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz (TR1 NPN) - - 2.5 pF
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz (TR2 PNP) - - 3 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz (TR1 NPN) - 230 - MHz
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz (TR2 PNP) - 180 - MHz
Models & Packages
Type Number Package Name Description Package Configuration PNP/PNP Complement NPN/NPN Complement JEITA
PEMD12 SOT666 Plastic surface-mounted package; 6 leads Ultra small and flat lead - PEMB2, PEMH2 -
PUMD12 SOT363 Plastic surface-mounted package; 6 leads Very small PUMB2, PUMH2 - SC-88

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications

2410121742_Nexperia-PUMD12-115_C513103.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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